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I-Single Crystal Silicon Ingot

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I-Single Crystal Silicon Ingotis ngokuvamile ekhulile njenge-cylindrical ingot enkulu ngobuchwepheshe be-doping obunembile kanye nokudonsa i-Czochralski CZ, inkambu yeMagnetic eyenzelwe i-Czochralski MCZ nezindlela ze-Floating Zone FZ.Indlela ye-CZ isetshenziswa kakhulu ekukhuleni kwekristalu ye-silicon yama-ingots amakhulu angama-cylindrical ububanzi obufika ku-300mm esetshenziswa embonini ye-electronics ukwenza amadivaysi e-semiconductor.Indlela ye-MCZ iwukuhluka kwendlela ye-CZ lapho inkambu kazibuthe edalwe yizibuthe kagesi, engakwazi ukuzuza ukuhlushwa komoyampilo ophansi ngokuqhathaniswa, ukugxilisa ukungcola okuphansi, ukugudluka okuphansi kanye nokwehluka kokumelana neyunifomu.Indlela ye-FZ isiza ukufezwa kokuphikiswa okuphezulu okungaphezulu kuka-1000 Ω-cm kanye nekristalu ehlanzekile enokuqukethwe komoyampilo ophansi.

Ukulethwa

I-Single Crystal Silicon Ingot CZ, MCZ, FZ noma FZ NTD enohlobo lwe-n noma i-p-type conductivity e-Western Minmetals (SC) Corporation ingalethwa ngosayizi ongu-50mm, 75mm, 100mm, 125mm, 150mm no-200mm ububanzi (2, 3) .

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Ukucaciswa Kwezobuchwepheshe

I-Single Crystal Silicon Ingot

I-Crystal Silicon Ingot eyodwa CZ, MCZ, FZ noma FZ NTDenohlobo lwe-n noma i-p-type conductivity e-Western Minmetals (SC) Corporation ingalethwa ngosayizi ongu-50mm, 75mm, 100mm, 125mm, 150mm kanye no-200mm ububanzi (2, 3, 4, 6 kanye no-8 intshi), ukumaketha <100 >, <110>, <111> enendawo esekelwe kuphakethe lesikhwama sepulasitiki ngaphakathi nebhokisi lebhokisi ngaphandle, noma njengokucaciswa okwenziwe ngendlela oyifisayo ukuze kufinyelelwe esixazululweni esifanele.

Cha.	Izinto	Ukucaciswa Okujwayelekile
1	Usayizi	2", 3", 4", 5", 6", 8", 9.5", 10", 12"
2	Ububanzi mm	50.8-241.3, noma njengoba kudingeka
3	Indlela Yokukhula	CZ, MCZ, FZ, FZ-NTD
4	Uhlobo lwe-Conductivity	Uhlobo lwe-P / i-Boron doped, uhlobo lwe-N / Phosphide edotshiwe noma e-Un-doped
5	Ubude mm	≥180 noma njengoba kudingeka
6	Ukuqondisa	<100>, <110>, <111>
7	Ukungazweli Ω-cm	Njengoba kudingeka
8	Okuqukethwe kwekhabhoni a/cm³	≤5E16 noma njengoba kudingeka
9	Okuqukethwe komoyampilo a/cm³	≤1E18 noma njengoba kudingeka
10	Ukungcoliswa kwensimbi a/cm³	<5E10 (Cu, Cr, Fe, Ni) noma <3E10 (Al, Ca, Na, K, Zn)
11	Ukupakisha	Isikhwama sepulasitiki ngaphakathi, ikesi leplywood noma ibhokisi lebhokisi ngaphandle.

Uphawu	Si
Inombolo Ye-athomu	14
Isisindo se-Atomic	28.09
Isigaba Sezinto	I-Metalloid
Iqembu, Isikhathi, Vimba	14, 3, p
Isakhiwo sekristalu	Idayimane
Umbala	Okumpunga okumnyama
I-Melting Point	1414°C, 1687.15 K
Iphuzu elibilayo	3265°C, 3538.15 K
Ukuminyana ku-300K	2.329 g/cm³
Ukumelana kwangaphakathi	3.2E5 Ω-cm
Inombolo ye-CAS	7440-21-3
Inombolo ye-EC	231-130-8

I-Single Crystal Silicon Ingot, lapho isikhule ngokuphelele futhi ifaneleka ukumelana kwayo, okuqukethwe ukungcola, ukuphelela kwekristalu, usayizi nesisindo, igxiliswa kusetshenziswa amasondo edayimane ukuze ayenze ibe isilinda esiphelele ukuya kububanzi obufanele, bese ingena inqubo yokubhala ukuze isuse amaphutha emishini ashiywe inqubo yokugaya. .Ngemva kwalokho i-cylindrical ingot isikwa ibe amabhulokhi anobude obuthile, futhi inikezwa inotshi kanye nesicaba esiyisisekelo noma sesibili ngamasistimu okubamba amawafa azenzakalelayo ukuze aqondaniswe ukuze ahlonze umumo we-crystallographic kanye nokusebenza ngaphambi kwenqubo yokusika i-wafer engezansi komfula.