I-Silicon Carbide SiC

Incazelo

I-Silicon Carbide Wafer SiC, ilukhuni ngokwedlulele, inhlanganisela yekristalline ekhiqizwe ngokwenziwa ye-silicon nekhabhoni ngendlela ye-MOCVD, futhi imibukisoigebe layo elihlukile lebhendi elibanzi kanye nezinye izici ezithandekayo ze-coefficient ephansi yokwanda okushisayo, izinga lokushisa eliphakeme lokusebenza, ukukhishwa okuhle kokushisa, ukulahleka kokushintshashintsha okuphansi kanye nokulahlekelwa kwe-conduction, ukonga kakhudlwana kwamandla, ukuqhutshwa kokushisa okuphezulu namandla okuphuka kwensimu kagesi enamandla, kanye namagagasi agxilile. isimo.I-Silicon Carbide SiC e-Western Minmetals (SC) Corporation ingahlinzekwa ngosayizi we-2″ 3' 4“ kanye no-6″ (50mm, 75mm, 100mm, 150mm) ububanzi, enohlobo lwe-n, i-semi-insulating noma i-dummy wafer yezimboni. kanye nesicelo selabhorethri.Noma yikuphi ukucaciswa okwenziwe ngezifiso kungesixazululo esiphelele kumakhasimende ethu emhlabeni jikelele.

Izinhlelo zokusebenza

Iwafer yekhwalithi ephezulu ye-4H/6H Silicon Carbide SiC ilungele ukwenziwa kwezinto eziningi zikagesi ezisheshayo, ezishisa kakhulu nezinamandla kagesi njenge-Schottky diode & SBD, ama-MOSFET nama-JFET ashintsha amandla aphezulu, njll. futhi into efiselekayo ocwaningweni nasekuthuthukisweni kwama-insulated-gate bipolar transistors kanye nama-thyristors.Njengesisetshenziswa se-semiconducting sesizukulwane esisha esivelele, i-Silicon Carbide SiC wafer iphinda isebenze njengesisakazi sokushisa esisebenza kahle ezingxenyeni zama-LED ezinamandla amakhulu, noma njengendawo engaphansi ezinzile nedumile yokukhula kwesendlalelo se-GaN esivuna ukuhlolwa kwesayensi okuqondiswe esikhathini esizayo.

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Ukucaciswa Kwezobuchwepheshe

I-Silicon Carbide SiC

I-Silicon Carbide SiCkwa-Western Minmetals (SC) Corporation ingahlinzekwa ngosayizi we-2″ 3' 4“ kanye no-6″ (50mm, 75mm, 100mm, 150mm) ububanzi, enohlobo lwe-n, i-semi-insulating noma i-dummy wafer ukuze kusetshenziswe izimboni kanye nelabhorethri .Noma yikuphi ukucaciswa okwenziwe ngezifiso kuyisixazululo esiphelele kumakhasimende ethu emhlabeni jikelele.

Ifomula yomugqa	I-SiC
Isisindo samangqamuzana	40.1
Isakhiwo sekristalu	I-Wurtzite
Ukubukeka	Okuqinile
I-Melting Point	3103±40K
Iphuzu elibilayo	N/A
Ukuminyana ku-300K	3.21 g/cm³
Igebe Lamandla	(3.00-3.23) eV
Ukumelana kwangaphakathi	>1E5 Ω-cm
Inombolo ye-CAS	409-21-2
Inombolo ye-EC	206-991-8

Cha.	Izinto	Ukucaciswa Okujwayelekile
1	Usayizi we-SiC	2"	3"	4"	6"
2	Ububanzi mm	50.8 0.38	76.2 0.38	100 0.5	150 0.5
3	Indlela Yokukhula	I-MOCVD	I-MOCVD	I-MOCVD	I-MOCVD
4	Uhlobo lwe-Conductivity	4H-N, 6H-N, 4H-SI, 6H-SI
5	Ukungazweli Ω-cm	0.015-0.028;0.02-0.1;>1E5
6	Ukuqondisa	0°±0.5°;4.0° ukuya ku-<1120>
7	Ubukhulu μm	330±25	330±25	(350-500)±25	(350-500)±25
8	Indawo Eyisisekelo Yefulethi	<1-100>±5°	<1-100>±5°	<1-100>±5°	<1-100>±5°
9	Ubude Befulethi obuyinhloko mm	16±1.7	22.2±3.2	32.5±2	47.5±2.5
10	Indawo Yefulethi Yesibili	I-silicon ibheke phezulu: 90°, ngokwewashi ukusuka efulethini eliyinhloko ±5.0°
11	I-Second Flat Ubude mm	8±1.7	11.2±1.5	18±2	22±2.5
12	I-TTV μm max	15	15	15	15
13	Khothama μm max	40	40	40	40
14	I-Warp μm max	60	60	60	60
15	Ukukhishwa komphetho mm ubukhulu	1	2	3	3
16	I-Micropipe Density cm-2	<5, izimboni;<15, ilebhu;<50, inhlanhla
17	Ukuhlukaniswa cm-2	<3000, izimboni;<20000, ilebhu;<500000, dummy
18	I-Surface Roughness nm max	1(Iphucuziwe), 0.5 (CMP)
19	Imifantu	Lutho, lwebanga lezimboni
20	Amapuleti aneHexagonal	Lutho, lwebanga lezimboni
21	Ukuklwebheka	≤3mm, ubude obuphelele bungaphansi kobubanzi be-substrate
22	Ama-Edge Chips	Lutho, lwebanga lezimboni
23	Ukupakisha	Isiqukathi esilucwecwana esisodwa esivalwe esikhwameni esiyinhlanganisela ye-aluminium.

I-Silicon Carbide SiC 4H/6HI-wafer yekhwalithi ephezulu ilungele ukwenziwa kwezinto eziningi ezishesha kakhulu, ezisezingeni eliphezulu nezinamandla kagesi afana ne-Schottky diode & SBD, ama-MOSFETs nama-JFET ashintsha amandla aphezulu, njll. Futhi iyimpahla efiselekayo ucwaningo nokuthuthukiswa kwe-insulated-gate bipolar transistors kanye nama-thyristors.Njengesisetshenziswa se-semiconducting sesizukulwane esisha esivelele, i-Silicon Carbide SiC wafer iphinda isebenze njengesisakazi sokushisa esisebenza kahle ezingxenyeni zama-LED ezinamandla amakhulu, noma njengendawo engaphansi ezinzile nedumile yokukhula kwesendlalelo se-GaN esivuna ukuhlolwa kwesayensi okuqondiswe esikhathini esizayo.