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I-Epitaxial (EPI) I-Silicon Wafer

Incazelo

I-Epitaxial Silicon Wafernoma i-EPI Silicon Wafer, iyicwecwe eliwungqimba lwekristalu elenziwe nge-semiconducting elifakwe endaweni ecwebezelayo ye-silicon substrate ngokukhula kwe-epitaxial.Isendlalelo se-epitaxial singase sibe into efanayo ne-substrate ngokukhula kwe-epitaxial okulinganayo, noma isendlalelo esingavamile esinekhwalithi ethile efiselekayo ngokukhula kwe-epitaxial ehlukahlukene, eyamukela ubuchwepheshe bokukhula kwe-epitaxial obuhlanganisa i-chemical vapor deposition CVD, isigaba se-epitaxy LPE, kanye ne-molecular beam. i-epitaxy MBE ukuze kuzuzwe ikhwalithi ephezulu kakhulu yokuminyana okunesici esiphansi kanye nokubamahwashana okuhle kwendawo.Ama-Silicon Epitaxial Wafers asetshenziswa ngokuyinhloko ekukhiqizweni kwamadivayisi athuthukisiwe we-semiconductor, izakhi ze-semiconductor ezididiyelwe kakhulu, ama-IC, ama-discrete namandla, futhi asetshenziselwa isici se-diode ne-transistor noma i-substrate ye-IC efana nohlobo lwe-bipolar, i-MOS kanye namadivayisi we-BiCMOS.Ngaphezu kwalokho, ama-wafers e-silicone e-epitaxial engqimba amaningi kanye nefilimu ewugqinsi ye-EPI avame ukusetshenziswa ku-microelectronics, i-photonics kanye nesicelo se-photovoltaics.

Ukulethwa

I-Epitaxial Silicon Wafers noma i-EPI Silicon Wafer at Western Minmetals (SC) Corporation inganikezwa ngosayizi ongu-4, 5 no-6 intshi (100mm, 125mm, 150mm ububanzi), ngomumo ongu-<100>, <111>, i-epilayer resistivity engu-<1ohm -cm noma kufika ku-150ohm-cm, kanye nogqinsi lwe-epilayer engu-<1um noma kufika ku-150um, ukwanelisa izidingo ezihlukahlukene ekuqedeni okungaphezulu kokwelashwa okuqoshiwe noma kwe-LTO, epakishwe kukhasethi elinebhokisi lebhokisi ngaphandle, noma njengokucaciswa okwenziwe ngokwezifiso kusixazululo esiphelele. . 


Imininingwane

Omaka

Ukucaciswa Kwezobuchwepheshe

I-Epi Silicon Wafer

SIE-W

I-Epitaxial Silicon Wafersnoma i-EPI Silicon Wafer e-Western Minmetals (SC) Corporation inganikezwa ngosayizi we-intshi engu-4, 5 no-6 (100mm, 125mm, 150mm ububanzi), i-orientation engu-<100>, <111>, i-epilayer resistivity engu-<1ohm-cm noma kufika ku-150ohm-cm, kanye nogqinsi lwe-epilayer engu-<1um noma kufika ku-150um, ukuze kwanelise izidingo ezihlukahlukene ekuqedeni okungaphezulu kokwelashwa okuqoshiwe noma kwe-LTO, epakishwe kukhasethi elinebhokisi lebhokisi ngaphandle, noma njengokucaciswa okwenziwe ngokwezifiso ukuze kube nesixazululo esiphelele.

Uphawu Si
Inombolo Ye-athomu 14
Isisindo se-Atomic 28.09
Isigaba Sezinto I-Metalloid
Iqembu, Isikhathi, Vimba 14, 3, p
Isakhiwo sekristalu Idayimane
Umbala Okumpunga okumnyama
I-Melting Point 1414°C, 1687.15 K
Iphuzu elibilayo 3265°C, 3538.15 K
Ukuminyana ku-300K 2.329 g/cm3
Ukumelana kwangaphakathi 3.2E5 Ω-cm
Inombolo ye-CAS 7440-21-3
Inombolo ye-EC 231-130-8
Cha. Izinto Ukucaciswa Okujwayelekile
1 Izimpawu Ezijwayelekile
1-1 Usayizi 4" 5" 6"
1-2 Ububanzi mm 100±0.5 125±0.5 150±0.5
1-3 Ukuqondisa <100>, <111> <100>, <111> <100>, <111>
2 I-Epitaxial Layer Characters
2-1 Indlela Yokukhula I-CVD I-CVD I-CVD
2-2 Uhlobo lwe-Conductivity P noma P+, N/ noma N+ P noma P+, N/ noma N+ P noma P+, N/ noma N+
2-3 Ubukhulu μm 2.5-120 2.5-120 2.5-120
2-4 Ukuqina Uniformity ≤3% ≤3% ≤3%
2-5 Ukungazweli Ω-cm 0.1-50 0.1-50 0.1-50
2-6 I-Resistivity Uniformity ≤3% ≤5% -
2-7 Ukuhlukaniswa cm-2 <10 <10 <10
2-8 Ikhwalithi Yobuso Akukho chip, inkungu noma ikhasi lewolintshi elisele, njll.
3 Phatha izici ze-Substrate
3-1 Indlela Yokukhula CZ CZ CZ
3-2 Uhlobo lwe-Conductivity P/N P/N P/N
3-3 Ubukhulu μm 525-675 525-675 525-675
3-4 Ubukhulu Uniformity max 3% 3% 3%
3-5 Ukungazweli Ω-cm Njengoba kudingeka Njengoba kudingeka Njengoba kudingeka
3-6 I-Resistivity Uniformity 5% 5% 5%
3-7 I-TTV μm max 10 10 10
3-8 Khothama μm max 30 30 30
3-9 I-Warp μm max 30 30 30
3-10 I-EPD cm-2 ubuningi 100 100 100
3-11 Iphrofayela ye-Edge Okuyindilinga Okuyindilinga Okuyindilinga
3-12 Ikhwalithi Yobuso Akukho chip, inkungu noma ikhasi lewolintshi elisele, njll.
3-13 Emuva Side Qeda I-Etched noma i-LTO (5000±500Å)
4 Ukupakisha Ikhasethi ngaphakathi, ibhokisi lebhokisi ngaphandle.

I-Silicon Epitaxial Wafersasetshenziswa ngokuyinhloko ekukhiqizeni amadivaysi esemiconductor athuthukisiwe, ama-ICs ahlanganiswe kakhulu esemiconductor, amadivaysi ahlukene kanye namandla, aphinde asetshenziselwa isici se-diode ne-transistor noma i-substrate ye-IC efana nohlobo lwe-bipolar, i-MOS kanye namadivayisi we-BiCMOS.Ngaphezu kwalokho, ama-wafers e-silicone e-epitaxial engqimba amaningi kanye nefilimu ewugqinsi ye-EPI avame ukusetshenziswa ku-microelectronics, i-photonics kanye nesicelo se-photovoltaics.

GaSb-W

SIE-W1

sm6

SIE-W3

s8

PK-26 (2)

Amathiphu Okuthenga

  • Isampula Itholakala Lapho Ucelwa
  • Ukuphepha Ukulethwa Kwempahla Nge-Courier/Air/Sea
  • Ukuphathwa Kwekhwalithi ye-COA/COC
  • Ukupakisha Okuvikelekile & Kalula
  • Ukupakisha Okujwayelekile kwe-UN Kuyatholakala Lapho Ucelwa
  • ISO9001:2015 Certified
  • Imigomo ye-CPT/CIP/FOB/CFR Nge-Incoterms 2010
  • Imigomo Yokukhokha Eguquguqukayo T/TD/PL/C Iyamukeleka
  • Amasevisi Aphelele Asemuva Kokuthengisa
  • Ukuhlolwa Kwekhwalithi Ngesikhungo Sesikhathi Esigcwele
  • Ukuvunyelwa Kwemithethonqubo ye-Rohs/REACH
  • Izivumelwano Ezingadaluli NDA
  • Inqubomgomo Yezambiwayo Engangqubuzani
  • Ukubuyekezwa Okujwayelekile Kokuphathwa Kwemvelo
  • Ukufezekiswa Kwesibopho Somphakathi

I-Epitaxial Silicon Wafer


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