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I-Indidium Phosphide InP

Incazelo

I-Indidium Phosphide InP,I-CAS No.22398-80-7, indawo encibilikayo engu-1600°C, isemiconductor eyinhlanganisela kanambambili yomndeni we-III-V, isakhiwo sekristalu esigxile ku-cubic “zinc blende”, esifana neningi lamasemiconductors e-III-V, ahlanganiswa ukusuka I-6N 7N yobumsulwa obuphezulu be-indium kanye nesici se-phosphorus, futhi ikhule yaba yikristalu eyodwa ngobuchule be-LEC noma be-VGF.Ikristalu ye-Indium Phosphide ifakwe ukuze ibe wuhlobo lwe-n, uhlobo lwe-p noma i-semi-insulating conductivity ukuze kuthuthukiswe ukwenziwa kwe-wafer kuze kufike ku-6" (150 mm) ububanzi, okufaka igebe layo lebhendi eliqondile, ukuhamba okuphezulu okuphezulu kwama-electron nezimbobo kanye nokushisa okusebenzayo. conductivity.I-Indium Phosphide InP Wafer yokuqala noma ibanga lokuhlola e-Western Minmetals (SC) Corporation inganikezwa ngohlobo lwe-p, uhlobo lwe-n kanye ne-semi-insulating conductivity ngosayizi ongu-2” 3” 4” no-6”(kufika ku-150mm) ububanzi, umumo <111> noma <100> nogqinsi 350-625um ngokuqedwa kwangaphezulu kwenqubo eqoshiwe nephucuziwe noma elungele i-Epi.Khonamanjalo i-Indium Phosphide Single Crystal ingot 2-6″ iyatholakala uma uyicela.I-Polycrystalline Indium Phosphide InP noma i-Multi-crystal InP ingot elingana no-D(60-75) x Ubude (180-400) mm obungu-2.5-6.0kg ene-concentration yenkampani yenethiwekhi engaphansi kuka-6E15 noma 6E15-3E16 nayo iyatholakala.Noma yikuphi ukucaciswa okwenziwe ngezifiso okutholakalayo lapho ucelwa ukuze kuzuzwe isixazululo esiphelele.

Izinhlelo zokusebenza

Iwafa ye-Indium Phosphide InP isetshenziswa kabanzi ekwenzeni izakhi ze-optoelectronic, izinto zikagesi ezinamandla amakhulu kanye nemvamisa ephezulu, njenge-substrate ye-epitaxial indium-gallium-arsenide (InGaAs) esekelwe kumadivayisi e-opto-electronic.I-Indium Phosphide iphinde ibe sekwenziweni kwemithombo yokukhanya ethembisa ngokwedlulele kwezokuxhumana nge-fiber optical, imishini yomthombo wamandla we-microwave, izikhulisa-zwi ze-microwave kanye namadivayisi wama-FETs wamasango, ama-modulator anesivinini esikhulu nezithonjana zezithombe, nokuzulazula ngesathelayithi nokunye.


Imininingwane

Omaka

Ukucaciswa Kwezobuchwepheshe

I-Indidium Phosphide InP

InP-W

I-Indidium Phosphide Ikristalu EyodwaI-Wafer (InP crystal ingot noma i-Wafer) e-Western Minmetals (SC) Corporation inganikezwa ngohlobo lwe-p, uhlobo lwe-n kanye ne-semi-insulating conductivity ngosayizi ongu-2” 3” 4” no-6”(kufika ku-150mm) ububanzi, umumo <111> noma <100> nogqinsi 350-625um ngokuqedwa kwangaphezulu kwenqubo eqoshiwe nephucuziwe noma elungele i-Epi.

I-Indidium Phosphide I-Polycrystallinenoma i-Multi-Crystal ingot (InP poly ingot) ngosayizi we-D(60-75) x L(180-400) mm ka-2.5-6.0kg ngokugxilisa kwenkampani yenethiwekhi okungaphansi kuka-6E15 noma 6E15-3E16 iyatholakala.Noma yikuphi ukucaciswa okwenziwe ngezifiso okutholakalayo lapho ucelwa ukuze kuzuzwe isixazululo esiphelele.

Indium Phosphide 24

Cha. Izinto Ukucaciswa Okujwayelekile
1 I-Indidium Phosphide Ikristalu Eyodwa 2" 3" 4"
2 Ububanzi mm 50.8±0.5 76.2±0.5 100±0.5
3 Indlela Yokukhula VGF VGF VGF
4 I-Conductivity I-P/Zn-doped, N/(S-doped noma i-un-doped), I-Semi-insulating
5 Ukuqondisa (100)±0.5°, (111)±0.5°
6 Ubukhulu μm 350±25 600±25 600±25
7 I-Orientation Flat mm 16±2 22±1 32.5±1
8 I-Identification Flat mm 8±1 11±1 18±1
9 Ukuhamba cm2/Vs 50-70, >2000, (1.5-4)E3
10 I-Carrier Concentration cm-3 (0.6-6)E18, ≤3E16
11 I-TTV μm max 10 10 10
12 Khothama μm max 10 10 10
13 I-Warp μm max 15 15 15
14 Ukuminyana kokususwa endaweni cm-2 max 500 1000 2000
15 I-Surface Qeda P/E, P/P P/E, P/P P/E, P/P
16 Ukupakisha Isiqukathi esilucwecwana esisodwa esivalwe esikhwameni esiyinhlanganisela ye-aluminium.

 

Cha.

Izinto

Ukucaciswa Okujwayelekile

1

I-Indidium Phosphide Ingot

I-Poly-Crystalline noma i-Multi-Crystal Ingot

2

Usayizi we-Crystal

D(60-75) x L(180-400)mm

3

Isisindo nge-Crystal Ingot

2.5-6.0Kg

4

Ukuhamba

≥3500 cm2/VS

5

I-Carrier Concentration

≤6E15, noma 6E15-3E16 cm-3

6

Ukupakisha

I-InP crystal ingot ngayinye isesikhwameni sepulasitiki esivaliwe, ama-ingots angu-2-3 ebhokisini lebhokisi elilodwa.

Ifomula yomugqa I-InP
Isisindo samangqamuzana 145.79
Isakhiwo sekristalu Inhlanganisela yeZinc
Ukubukeka I-Crystalline
I-Melting Point 1062°C
Iphuzu elibilayo N/A
Ukuminyana ku-300K 4.81 g/cm3
Igebe Lamandla 1.344 eV
Ukumelana kwangaphakathi 8.6E7 Ω-cm
Inombolo ye-CAS 22398-80-7
Inombolo ye-EC 244-959-5

I-Indidium Phosphide InP Waferisetshenziswa kabanzi ekwenzeni izingxenye ze-optoelectronic, amandla aphezulu kanye namadivayisi kagesi avamile, njenge-substrate ye-epitaxial indium-gallium-arsenide (InGaAs) esekelwe kumadivayisi e-opto-electronic.I-Indium Phosphide iphinde ibe sekwenziweni kwemithombo yokukhanya ethembisa ngokwedlulele kwezokuxhumana nge-fiber optical, imishini yomthombo wamandla we-microwave, izikhulisa-zwi ze-microwave kanye namadivayisi wama-FETs wamasango, ama-modulator anesivinini esikhulu nezithonjana zezithombe, nokuzulazula ngesathelayithi nokunye.

InP-W2

InP-W6

Indium Phosphide 4

PC-15

s18

Amathiphu Okuthenga

  • Isampula Itholakala Lapho Ucelwa
  • Ukuphepha Ukulethwa Kwempahla Nge-Courier/Air/Sea
  • Ukuphathwa Kwekhwalithi ye-COA/COC
  • Ukupakisha Okuvikelekile & Kalula
  • Ukupakisha Okujwayelekile kwe-UN Kuyatholakala Lapho Ucelwa
  • ISO9001:2015 Certified
  • Imigomo ye-CPT/CIP/FOB/CFR Nge-Incoterms 2010
  • Imigomo Yokukhokha Eguquguqukayo T/TD/PL/C Iyamukeleka
  • Amasevisi Aphelele Asemuva Kokuthengisa
  • Ukuhlolwa Kwekhwalithi Ngesikhungo Sesikhathi Esigcwele
  • Ukuvunyelwa Kwemithethonqubo ye-Rohs/REACH
  • Izivumelwano Ezingadaluli NDA
  • Inqubomgomo Yezambiwayo Engangqubuzani
  • Ukubuyekezwa Okujwayelekile Kokuphathwa Kwemvelo
  • Ukufezekiswa Kwesibopho Somphakathi

I-Indidium Phosphide InP


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