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Cadmium Arsenide Cd3As2 | GaAs InAs Nb3As2 Featured Image
  • Cadmium Arsenide Cd3As2 | GaAs InAs Nb3As2
  • Cadmium Arsenide Cd3As2 | GaAs InAs Nb3As2
  • Cadmium Arsenide Cd3As2 | GaAs InAs Nb3As2
  • Cadmium Arsenide Cd3As2 | GaAs InAs Nb3As2
  • Cadmium Arsenide Cd3As2 | GaAs InAs Nb3As2

I-Cadmium Arsenide Cd3As2|I-GaAs InAs Nb3As2

Incazelo

I-Cadmium Arsenide Cd3As25N 99.999%,umbala ompunga omnyama, nokuminyana okungu-6.211g/cm3, indawo encibilikayo 721°C, i-molecule 487.04, CAS12006-15-4, inyibilika ku-nitric acid HNO3 kanye nokuzinza emoyeni, kuyinhlanganisela yezinto ezihlanganisiwe zokuhlanzeka okuphezulu kwe-cadmium ne-arsenic.I-Cadmium Arsenide iyi-semimetal ye-inorganic emndenini we-II-V futhi ibonisa i-Nernst Effect.Ikristalu ye-Cadmium Arsenide ekhuliswe indlela yokukhula ye-Bridgman, isakhiwo se-Dirac semimetal engafakwanga ngobuningi, iyi-semiconductor ewohlokayo ye-N-type II-V noma isemiconductor enegebe elincane enokuhamba okuphezulu, isisindo esingasebenzi kahle, kanye nokuqhutshwa kwe-parabolic kakhulu. ibhande.I-Cadmium Arsenide Cd3As2 noma i-CdAs iyikristale eqinile futhi ithola ukusetshenziswa okwengeziwe nangokwengeziwe ku-semiconductor nasenkambini ye-optic yesithombe njengezitholi ze-infrared ezisebenzisa umthelela we-Nernst, kuzinzwa zengcindezi yefilimu emincane, i-laser, i-LED ekhipha ukukhanya, amachashazi we-quantum, ukuze yenza ama-magnetoresistors nakuma-photodetectors.I-Arsenide compounds ye-Arsenide GaAs, i-Indium Arsenide InAs ne-Niobium Arsenide NbAs noma i-Nb5As3thola ukusetshenziswa okwengeziwe njengempahla ye-electrolyte, impahla ye-semiconductor, isibonisi se-QLED, inkambu ye-IC nezinye izinkambu ezibonakalayo.

Ukulethwa

I-Cadmium Arsenide Cd3As2kanye ne-Gallium Arsenide GaAs, i-Indium Arsenide InAs ne-Niobium Arsenide NbAs noma i-Nb5As3kwa-Western Minmetals (SC) Corporation ene-99.99% 4N kanye ne-99.999% 5N ubumsulwa bulingana ne-polycrystalline micropowder -60mesh, -80mesh, nanoparticle, isigaxa esingu-1-20mm, i-granule 1-6mm, i-chunk, ingenalutho, ikristalu eyinqwaba kanye nekristalu eyodwa njll. ., noma njengokucaciswa okwenziwe ngokwezifiso ukuze kufinyelelwe isixazululo esiphelele.


Imininingwane

Omaka

Ukucaciswa Kwezobuchwepheshe

I-Arsenide Compounds

I-Arsenide Compounds ikakhulukazi izakhi zensimbi nezinhlanganisela ze-metalloid, ezinokwakheka kwe-stoichiometric ezishintshayo ngaphakathi kwebanga elithile ukuze zakhe isixazululo esiqinile esisekelwe kwakwakhe.Inhlanganisela ye-Inter-metallic iyizakhiwo zayo ezinhle kakhulu phakathi kwensimbi ne-ceramic, futhi iba igatsha elibalulekile lezinto ezintsha zesakhiwo.Ngaphandle kwe-Gallium Arsenide GaAs, i-Indium Arsenide InAs ne-Niobium Arsenide NbAs noma i-Nb5As3ingabuye ihlanganiswe ngesimo sempushana, i-granule, isigaxa, ibha, ikristalu ne-substrate.

I-Cadmium Arsenide Cd3As2kanye ne-Gallium Arsenide GaAs, i-Indium Arsenide InAs ne-Niobium Arsenide NbAs noma i-Nb5As3kwa-Western Minmetals (SC) Corporation ene-99.99% 4N kanye ne-99.999% 5N ubumsulwa bulingana ne-polycrystalline micropowder -60mesh, -80mesh, nanoparticle, isigaxa esingu-1-20mm, i-granule 1-6mm, i-chunk, ingenalutho, ikristalu eyinqwaba kanye nekristalu eyodwa njll. ., noma njengokucaciswa okwenziwe ngokwezifiso ukuze kufinyelelwe isixazululo esiphelele.

CM-W2

GaAs-W3

Cha.

Into

Ukucaciswa Okujwayelekile

Ubumsulwa

Ukungcola kwe-PPM Max ngayinye

Usayizi

1

I-Cadmium ArsenideCd3As2

5N

 Ag/Cu/Ca/Mg/Sn/Fe/Cr/Bi 0.5, Ni/S 0.2, Zn/Pb 1.0

-60mesh -80mesh powder, 1-20mm isigaxa, 1-6mm granule

2

I-Gallium Arsenide Gas

5N 6N 7N

 Ukubunjwa kwe-GaAs kuyatholakala uma ucelwa

3

I-Niobium Arsenide NbAs

3N5

 Ukubunjwa kwe-NbAs kuyatholakala uma ucelwa

4

I-Indium Arsenide InAs

5N 6N

 I-InAs Composition iyatholakala uma uyicela

5

Ukupakisha

500g noma 1000g ebhodleleni polyethylene noma esikhwameni esiyinhlanganisela, ibhokisi ibhokisi ngaphandle

I-Gallium Arsenide

GaAs

I-Gallium Arsenide GaAs, i-III–V ehlanganisiwe ye-semiconductor eqondile enegebe le-semiconductor ene-zinc blende crystal structure, ihlanganiswa yi-high purity gallium kanye nezakhi ze-arsenic, futhi ingasikwa futhi yenziwe ibe yilucwecwana futhi ingabi nalutho isuka ku-crystalline ingot eyodwa ekhuliswe indlela ye-Vertical Gradient Freeze (VGF) .Ngenxa yokugcwala kwayo kwehholo okuchichimayo namandla aphezulu nokuzinza kwezinga lokushisa, lezo zingxenye ze-RF, ama-microwave ICs namadivayisi e-LED enziwe yikho konke afinyelela ukusebenza okuhle kakhulu ezigcawini zokuxhumana zefrikhwensi ephezulu.Ngaleso sikhathi, ukusebenza kahle kwayo kokudlulisa ukukhanya kwe-UV kubuye kuvumele ukuthi kube yinto eyisisekelo efakazelwe embonini ye-Photovoltaic.I-wafer ye-Gallium Arsenide GaAs e-Western Minmetals (SC) Corporation ingalethwa kufika ku-6" noma u-150mm ububanzi ngokuhlanzeka okungu-6N 7N, kanye ne-Gallium Arsenide mechanical grade substrate nayo iyatholakala. Khonamanjalo, ibha ye-polycrystalline ye-Gallium Arsenide, isigaxa kanye ne-granule njll. kokungu-99.999% 5N, 99.9999% 6N, 99.99999% 7N ehlinzekwe yi-Western Minmetals (SC) Corporation nayo iyatholakala noma njengokucaciswa okwenziwe ngendlela oyifisayo lapho ucelwa.

I-Indidium Arsenide

InAs

I-Indium Arsenide InAs, i-direct-band-gap semiconductor ecwebezelayo esakhiweni se-zinc-blende, ehlanganiswe nge-high purity indium kanye nezici ze-arsenic, ekhuliswe indlela ye-Liquid Encapsulated Czochralski (LEC), ingasikwa futhi yenziwe ibe isinkwa esilucwecwana esivela ku-ingot ye-crystalline eyodwa.Ngenxa yokuminyana okuphansi kokugudluka kodwa i-lattice engaguquki, i-InAs iyindawo engaphansi efanelekile yokuqhubeka nokusekela izakhiwo ezihlukene ze-InAsSb, InAsPSb & InNAsSb, noma ukwakheka kwe-algaSb superlattice.Ngakho-ke, idlala indima ebalulekile ekwenziweni kwamadivaysi e-infrared wave range 2-14 μm.Ngaphandle kwalokho, ukuhamba kwehholo okuphezulu kodwa i-bandgap yamandla emincane ye-InAs iphinde ivumele ukuthi ibe isizinda esihle kakhulu sezingxenye zehholo noma ezinye izisetshenziswa ze-laser nemisebe.I-Indium Arsenide InAs e-Western Minmetals (SC) Corporation nobumsulwa obungu-99.99% 4N, 99.999% 5N, 99.9999% 6N ingalethwa nge-substrate engu-2" 3" 4" ububanzi. Khonamanjalo, i-Indium Arsenide polycrystalline isigaxa e-Western Minmetal ) I-Corporation iyatholakala noma njengokucaciswa okwenziwe ngezifiso uma uyicela.

I-Niobium Arsenide

NbAs-2

Niobium Arsenide Nb5As3 or NbAs,okuqinile okumhlophe noma okumpunga, i-CAS No.12255-08-2, isisindo sefomula 653.327 Nb5As3kanye ne-167.828 NbAs, inhlanganisela kanambambili ye-Niobium ne-Arsenic ene-NbAs, Nb5As3, NbAs4 ... njll ehlanganiswe ngendlela ye-CVD, lawa masawoti aqinile anamandla aphezulu e-lattice futhi anobuthi ngenxa yobuthi bemvelo be-arsenic.Ukuhlaziywa kwezinga lokushisa eliphezulu kubonisa ukuthi i-NdAs ibonise ukuguquguquka kwe-arsenic lapho ishisa. I-Niobium Arsenide, i-Weyl semimetal, iwuhlobo lwe-semiconductor kanye nezinto zikagesi ezithwebula izithombe ezisetshenziswayo ze-semiconductor, i-photo optic, i-laser light-emitting diode, amachashazi e-quantum, izinzwa zamehlo nezingcindezi, njengeziphakathi, kanye nokwenza i-superconductor njll. I-Niobium Arsenide Nb5As3noma ama-NbAs e-Western Minmetals (SC) Corporation ngobumsulwa obungu-99.99% 4N angalethwa asesimweni sempushana, igranule, isigaxa, ithagethi kanye nekristalu eyinqwaba njll noma njengokucaciswa okwenziwe ngokwezifiso, okufanele kugcinwe endaweni evalwe kahle, engamelani nokukhanya. , indawo eyomile nepholile.

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Cd2As3 Nb2As3I-GaAs InAs

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