I-Indium Antimonide InSb

Incazelo

II-Antimonide InSb, isemiconductor yeqembu le-III–V crystalline compounds ene-zinc-blende lattice structure, ihlanganiswa yi-6N 7N high purity Indium kanye nezakhi ze-antimony, futhi ikhule i-crystal eyodwa ngendlela ye-VGF noma indlela ye-Liquid Encapsulated Czochralski LEC kusukela ku-multiple zone refined polycrystalline ingot, ezingasikwa futhi zenziwe zibe yi-wafer bese ivinjwa kamuva.I-InSb iyi-semiconductor eguquguqukayo eqondile enegebe elincane lebhande elingu-0.17eV ekamelweni lokushisa, ukuzwela okuphezulu ku-1–5μm wavelength kanye nokuhamba kwehholo okuphezulu kakhulu.I-Indium Antimonide InSb n-type, p-type kanye ne-semi-insulating conductivity e-Western Minmetals (SC) Corporation inganikezwa ngosayizi we-1″ 2″ 3″ no-4” (30mm, 50mm, 75mm, 100mm) ububanzi, umumo < 111> noma <100>, futhi ne-wafer surface finish of as-cut, egqitshiwe, eqoshiwe futhi epholishiwe.I-Indium Antimonide InSb eqondiwe ye-Dia.50-80mm enohlobo lwe-n-doped engafakwanga nayo iyatholakala.Khonamanjalo, i-polycrystalline indium antimonide InSb (i-multicrystal InSb) enosayizi wesigaxa esingajwayelekile, noma engenalutho (15-40) x (40-80) mm, kanye nebha eyindilinga engu-D30-80mm nayo yenziwe ngendlela oyifisayo uma icelwa kwisixazululo esiphelele.

Isicelo

I-Indium Antimonide InSb iyi-substrate eyodwa ekahle yokukhiqiza izakhi eziningi ezisezingeni eliphezulu kanye namadivayisi, njengesixazululo esithuthukisiwe se-imaging esishisayo, isistimu ye-FLIR, isici sehholo kanye nesici somphumela we-magnetoresistance, isistimu yokuqondisa imicibisholo ye-infrared homing, inzwa ye-Infrared photodetector esabela kakhulu. , inzwa enozibuthe enembayo ephezulu kanye ne-rotary resistivity sensor, i-focal planar array, futhi yashintshwa njengomthombo wemisebe ye-terahertz kanye nesibonakude se-infrared astronomical space njll.

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Ukucaciswa Kwezobuchwepheshe

I-Indium Antimonide

I-InSb

I-Indium Antimonide Substrate(I-InSb Substrate, i-InSb Wafer) uhlobo lwe-n noma uhlobo lwe-p e-Western Minmetals (SC) Corporation lunganikezwa ngosayizi ongu-1" 2" 3" no-4” (30, 50, 75 kanye no-100mm) ububanzi, umumo ongu-<111> noma u-<100>, futhi enobuso obuyicwecwana obunamaphethelo agqitshiwe, aqoshiwe, aphucuziwe.Ibha ye-Indium Antimonide Single Crystal (ibha ye-InSb Monocrystal) nayo inganikezwa uma icelwa.

I-Indium AntimonidePi-olycrystalline (I-InSb Polycrystalline, noma i-multicrystal InSb) enosayizi wesigaxa esingajwayelekile, noma engenalutho (15-40)x(40-80)mm nayo yenziwa ngendlela oyifisayo uma kucelwa isixazululo esiphelele.

Khonamanjalo, i-Indium Antimonide Target (InSb Target) ye-Dia.50-80mm enohlobo lwe-n-doped engafakwanga nayo iyatholakala.

Cha.	Izinto	Ukucaciswa Okujwayelekile
1	I-Indium Antimonide Substrate	2"	3"	4"
2	Ububanzi mm	50.5±0.5	76.2±0.5	100±0.5
3	Indlela Yokukhula	I-LEC	I-LEC	I-LEC
4	I-Conductivity	P-type/Zn,Ge doped, N-type/Te-doped, Un-doped
5	Ukuqondisa	(100)±0.5°, (111)±0.5°
6	Ubukhulu μm	500±25	600±25	800±25
7	I-Orientation Flat mm	16±2	22±1	32.5±1
8	I-Identification Flat mm	8±1	11±1	18±1
9	Ukuhamba cm2/Vs	1-7E5 N/un-doped, 3E5-2E4 N/Te-doped, 8-0.6E3 noma ≤8E13 P/Ge-doped
10	I-Carrier Concentration cm-3	6E13-3E14 N/un-doped, 3E14-2E18 N/Te-doped, 1E14-9E17 noma <1E14 P/Ge-doped
11	I-TTV μm max	15	15	15
12	Khothama μm max	15	15	15
13	I-Warp μm max	20	20	20
14	Ukuminyana kokususwa endaweni cm-2 max	50	50	50
15	I-Surface Qeda	P/E, P/P	P/E, P/P	P/E, P/P
16	Ukupakisha	Isiqukathi esilucwecwana esisodwa sivalwe esikhwameni se-Aluminium.

Cha.	Izinto	Ukucaciswa Okujwayelekile
Cha.	Izinto	II-Antimonide Polycrystalline	Ithagethi ye-Indium Antimonide
1	I-Conductivity	Kuhlehlisiwe	Kuhlehlisiwe
2	I-Carrier Concentration cm^-3	6E13-3E14	1.9-2.1E16
3	Ukuhamba cm²/Vs	5-7E5	6.9-7.9E4
4	Usayizi	15-40x40-80 mm	D(50-80) mm
5	Ukupakisha	Esikhwameni se-aluminium esiyinhlanganisela, ibhokisi lebhokisi ngaphandle

Ifomula yomugqa	I-InSb
Isisindo samangqamuzana	236.58
Isakhiwo sekristalu	Inhlanganisela yeZinc
Ukubukeka	Amakristalu ensimbi ampunga ngokumnyama
I-Melting Point	527 °C
Iphuzu elibilayo	N/A
Ukuminyana ku-300K	5.78 g/cm³
Igebe Lamandla	0.17 eV
Ukumelana kwangaphakathi	4E(-3) Ω-cm
Inombolo ye-CAS	1312-41-0
Inombolo ye-EC	215-192-3

I-Indium Antimonide InSbi-wafer iyindawo eyodwa ekahle yokukhiqiza izingxenye namadivayisi amaningi asezingeni eliphezulu, njengesixazululo esithuthukisiwe sokucabanga esishisayo, isistimu ye-FLIR, isici sehholo kanye nesici somphumela we-magnetoresistance, isistimu yokuqondisa imicibisholo ye-infrared homing, inzwa ye-Infrared photodetector esabela kakhulu, ephezulu. -inzwa enembile kazibuthe kanye ne-rotary resistivity sensor, i-focal planar array, futhi iguqulelwe njengomthombo wemisebe ye-terahertz kanye nesibonakude se-infrared astronomical space njll.