I-Gallium Antimonide GaSb

Incazelo

I-Gallium Antimonide GaSb, isemiconductor yenhlanganisela yeqembu III–V ene-zinc-blende lattice structure, ihlanganiswa yi-6N 7N high purity gallium kanye nezakhi ze-antimony, futhi ikhuliswe yaba yikristalu ngendlela ye-LEC isuka ku-polycrystalline ingot efriziwe noma indlela ye-VGF ene-EPD<1000cm^-3.I-wafer ye-GaSb ingasikwa futhi yenziwe kamuva kusuka ku-ingot yekristalu eyodwa ngokufana okuphezulu kwamapharamitha kagesi, izakhiwo ezihlukile nezihlala njalo ze-lattice, nokuminyana okunesici esiphansi, inkomba ephakeme kakhulu yokugqama kunezinye izinhlanganisela ezingezona ezensimbi.I-GaSb ingacutshungulwa ngokukhetha okubanzi ekuqondeni okuqondile noma okuvaliwe, ukugxila okuphansi noma okuphezulu kwe-doped, ukuqedwa okuhle kwendawo kanye nokukhula kwe-epitaxial ye-MBE noma ye-MOCVD.I-Gallium Antimonide substrate isetshenziswa ezinhlelweni ezisezingeni eliphezulu kakhulu ze-photo-optic kanye ne-optoelectronic njengokwenziwa kwezitholi zezithombe, izitholi ze-infrared eziphila isikhathi eside, ukuzwela okuphezulu nokuthembeka, ingxenye ye-photoresist, ama-LED nama-lasers e-infrared, ama-transistors, i-thermal photovoltaic cell. kanye nezinhlelo ze-thermo-photovoltaic.

Ukulethwa

I-Gallium Antimonide GaSb e-Western Minmetals (SC) Corporation inganikezwa ngohlobo lwe-n, uhlobo lwe-p kanye ne-semi-insulating conductivity engashintshiwe ngosayizi ongu-2” 3” no-4” (50mm, 75mm, 100mm) ububanzi, umumo ongu-<111> noma <100>, kanye nokuqedwa kwe-wafer surface of as-cut, eqoshiwe, epholishiwe noma ikhwalithi ephezulu elungile ye-epitaxy.Zonke izingcezu zibhalwe nge-laser ngayinye ukuze zihlonzwe.Ngaleso sikhathi, isigaxa se-polycrystalline gallium antimonide GaSb siphinde senziwe ngendlela oyifisayo lapho kucelwa isixazululo esiphelele.

Buza manje

Imininingwane

Omaka

Ukucaciswa Kwezobuchwepheshe

I-Gallium Antimonide

I-GaSb

I-Gallium Antimonide GaSbi-substrate isetshenziswa ezinhlelweni ezisezingeni eliphezulu kakhulu ze-photo-optic kanye ne-optoelectronic njengokwenziwa kwezithonjana zezithombe, izitholi ze-infrared eziphila isikhathi eside, ukuzwela okuphezulu nokuthembeka, ingxenye ye-photoresist, ama-LED nama-lasers e-infrared, ama-transistors, i-thermal photovoltaic cell kanye ne-thermo. - Amasistimu we-photovoltaic.

	Izinto	Ukucaciswa Okujwayelekile
1	Usayizi	2"	3"	4"
2	Ububanzi mm	50.5±0.5	76.2±0.5	100±0.5
3	Indlela Yokukhula	I-LEC	I-LEC	I-LEC
4	I-Conductivity	P-type/Zn-doped, Un-doped, N-type/Te-doped
5	Ukuqondisa	(100)±0.5°, (111)±0.5°
6	Ubukhulu μm	500±25	600±25	800±25
7	I-Orientation Flat mm	16±2	22±1	32.5±1
8	I-Identification Flat mm	8±1	11±1	18±1
9	Ukuhamba cm2/Vs	200-3500 noma njengoba kudingeka
10	I-Carrier Concentration cm-3	(1-100)E17 noma njengoba kudingeka
11	I-TTV μm max	15	15	15
12	Khothama μm max	15	15	15
13	I-Warp μm max	20	20	20
14	Ukuminyana kokususwa endaweni cm-2 max	500	1000	2000
15	I-Surface Qeda	P/E, P/P	P/E, P/P	P/E, P/P
16	Ukupakisha	Isiqukathi esilucwecwana esisodwa sivalwe esikhwameni se-Aluminium.

Ifomula yomugqa	I-GaSb
Isisindo samangqamuzana	191.48
Isakhiwo sekristalu	Inhlanganisela yeZinc
Ukubukeka	I-crystalline empunga eqinile
I-Melting Point	710°C
Iphuzu elibilayo	N/A
Ukuminyana ku-300K	5.61 g/cm³
Igebe Lamandla	0.726 eV
Ukumelana kwangaphakathi	1E3 Ω-cm
Inombolo ye-CAS	12064-03-8
Inombolo ye-EC	235-058-8

I-Gallium Antimonide GaSbe-Western Minmetals (SC) Corporation inganikezwa ngohlobo lwe-n, uhlobo lwe-p kanye ne-semi-insulating conductivity engahlehliwe ngobukhulu buka-2” 3” no-4” (50mm, 75mm, 100mm) ububanzi, umumo ongu-<111> noma <100 >, kanye nokuqedwa kwe-wafer surface of as-cut, eqoshiwe, epholishelwe noma elungiswe i-epitaxy yekhwalithi ephezulu.Zonke izingcezu zibhalwe nge-laser ngayinye ukuze zihlonzwe.Ngaleso sikhathi, isigaxa se-polycrystalline gallium antimonide GaSb siphinde senziwe ngendlela oyifisayo lapho kucelwa isixazululo esiphelele.