I-Gallium Phosphide GaP

Incazelo

I-Gallium Phosphide GaP, isemiconductor ebalulekile yezinto ezihlukile zikagesi njengezinye izinto ezihlanganisiwe ze-III-V, icwebezela esakhiweni se-cubic ZB esizinzile se-thermodynamically, iyikristalu esawolintshi-yellow semitransparent semitransparent enegebe lebhendi elingaqondile elingu-2.26 eV (300K), okuyi-300K kuhlanganiswe kusuka ku-6N 7N high purity gallium kanye ne-phosphorus, futhi yakhuliswa yaba yikristalu eyodwa ngobuchule be-Liquid Encapsulated Czochralski (LEC).Ikristalu ye-Gallium Phosphide i-doped sulphur noma i-tellurium ukuze ithole i-semiconductor yohlobo lwe-n, futhi i-zinc ifakwe njenge-p-type conductivity ukuze iqhubeke nokwakhiwa ibe isinkwa esiyisicwecwana esifunwayo, esisebenza kusistimu yokubona, i-electronics namanye ama-optoelectronics.I-Single Crystal GaP wafer ingalungiselelwa i-Epi-Ready ye-LPE yakho, i-MOCVD ne-MBE epitaxial application.Ikhwalithi ephezulu ye-crystal Gallium phosphide GaP wafer p-type, uhlobo lwe-n noma ukuhanjiswa okungashintshiwe e-Western Minmetals (SC) Corporation inganikezwa ngosayizi ongu-2″ no-3” (50mm, 75mm ububanzi), umumo <100>,<111 > ngokuqedwa okungaphezulu kwenqubo yokusikwa, epholishiwe noma elungele i-epi.

Izinhlelo zokusebenza

Ngokusebenza kahle okuphansi kwamanje nokusebenza okuphezulu ekukhanyeni okukhanyayo, i-wafer ye-Gallium phosphide GaP ifaneleka ezinhlelweni zokubonisa okubonakalayo njengama-diode ashibhile abomvu, awolintshi, kanye nohlaza okhanyayo (ama-LED) nokukhanya kwangemuva kwe-LCD ephuzi neluhlaza njll kanye nama-chips e-LED akhiqiza ukukhanya okuphansi kuya kokuphakathi, i-GaP nayo yamukelwa kabanzi njengesisekelo esiyisisekelo sezinzwa ze-infrared kanye nokukhiqizwa kwamakhamera.

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Imininingwane

Omaka

Ukucaciswa Kwezobuchwepheshe

I-Gallium Phosphide GaP

Icwecwe lekristalu elilodwa lekhwalithi ephezulu ye-Gallium Phosphide GaP noma uhlobo lwe-substrate p-type, uhlobo lwe-n noma ukuhanjiswa okungahlehlisiwe e-Western Minmetals (SC) Corporation kunganikezwa ngosayizi ongu-2″ no-3” (50mm, 75mm) ububanzi, umumo ongu-<100> , <111> enokuqedwa okungaphezulu kokusikwa, okugoqiwe, okugxilile, okupholishiwe, okulungele i-epi okusetshenzwa esitsheni esiyisicwecwana esisodwa esivalwe esikhwameni esiyinhlanganisela ye-aluminium noma njengokucaciswa okwenziwe ngendlela oyifisayo kusixazululo esiphelele.

Cha.	Izinto	Ukucaciswa Okujwayelekile
1	Usayizi we-GaP	2"
2	Ububanzi mm	50.8 ± 0.5
3	Indlela Yokukhula	I-LEC
4	Uhlobo lwe-Conductivity	P-type/Zn-doped, N-type/(S, Si,Te)-doped, Un-doped
5	Ukuqondisa	<1 1 1> ± 0.5°
6	Ubukhulu μm	(300-400) ± 20
7	Ukungazweli Ω-cm	0.003-0.3
8	I-Orientation Flat (OF) mm	16±1
9	I-Identification Flat (IF) mm	8±1
10	Ukuhamba kweHholo cm2/Vs min	100
11	I-Carrier Concentration cm^-3	(2-20) E17
12	I-Dislocation Density cm^-2ubuningi	2.00E+05
13	I-Surface Qeda	P/E, P/P
14	Ukupakisha	Isiqukathi esilucwecwana esisodwa esivalwe esikhwameni esiyinhlanganisela ye-aluminium, ibhokisi lebhokisi ngaphandle

Ifomula yomugqa	I-GaP
Isisindo samangqamuzana	100.7
Isakhiwo sekristalu	Inhlanganisela yeZinc
Ukubukeka	Okuwolintshi okuqinile
I-Melting Point	N/A
Iphuzu elibilayo	N/A
Ukuminyana ku-300K	4.14 g/cm³
Igebe Lamandla	2.26 eV
Ukumelana kwangaphakathi	N/A
Inombolo ye-CAS	12063-98-8
Inombolo ye-EC	235-057-2

I-Gallium Phosphide GaP Wafer, ngokusebenza kahle okuphansi kwamanje nokusebenza okuphezulu ekukhipheni ukukhanya, ifaneleka ezinhlelweni zokubonisa optical njengama-diode akhipha ukukhanya angabizi kakhulu abomvu, awolintshi, nokuluhlaza (ama-LED) nokukhanya kwangemuva kwe-LCD ephuzi nokuluhlaza njll kanye nama-chips e-LED akhiqiza aphansi kuya kwamaphakathi. ukukhanya, i-GaP iphinde yamukelwe kabanzi njengesisekelo esiyisisekelo sezinzwa ze-infrared kanye nokukhiqizwa kwamakhamera.