Incazelo
I-Crystal Germanium Wafer/Ingot eyodwanoma i-monocrystalline germanium iwumbala ompunga osiliva, indawo encibilikayo ingu-937°C, ukuminyana 5.33 g/cm3.I-crystalline germanium i-brittle futhi inopulasitiki omncane ekamelweni lokushisa.I-germanium ehlanzekile itholakala ngokuntanta kwendawo futhi ifakwe i-indium ne-gallium noma i-antimony ukuze ithole ukuguquguquka kohlobo lwe-n noma uhlobo lwe-p, enokuhamba kwama-electron aphezulu kanye nokuhamba kwezimbobo eziphezulu, futhi ingashiswa ngogesi ukuze kunqandwe inkungu noma i-anti-icing. izicelo.I-Single Crystal Germanium ikhuliswa ubuchwepheshe be-Vertical Gradient Freeze VGF ukuze kuqinisekiswe ukuzinza kwamakhemikhali, ukumelana nokugqwala, ukudluliswa kahle kwemishini, inkomba ephezulu kakhulu ye-refractive kanye nezinga eliphezulu lokuphelela kwe-lattice.
Izinhlelo zokusebenza
I-Crystal Germanium eyodwa ithola izinhlelo zokusebenza ezithembisayo nezibanzi, lapho i-electronic grade isetshenziselwa ama-diode nama-transistors, i-infrared noma i-optical grade germanium engenalutho noma iwindi iwindi le-IR optical noma amadiski, izingxenye ezibonakalayo ezisetshenziswa embonweni wasebusuku kanye nezixazululo ze-imaging ze-thermographic zokuvikela, ukukala izinga lokushisa elikude, izinto zokucisha umlilo kanye nemishini yokuqapha yezimboni, i-P ne-N yohlobo lwe-Germanium wafer efakwe kancane ingasetshenziselwa ukuhlola umphumela weHholo.Ibanga leseli ngelama-substrates asetshenziswa kumaseli elanga e-III-V ahlanganisa kathathu kanye namandla Amasistimu e-PV Agxilile weseli yelanga njll.
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Ukucaciswa Kwezobuchwepheshe
I-Single Crystal Germanium Wafer noma Ingotenohlobo lwe-n, uhlobo lwe-p kanye ne-un-doped conductivity and orientation <100> e-Western Minmetals (SC) Corporation ingalethwa ngosayizi ongu-2, 3, 4 kanye no-6 intshi ububanzi (50mm, 75mm, 100mm kanye no-150mm) indawo engaphezulu enamathiselwe noma epholishelwe kuphakethe lebhokisi legwebu noma ikhasethi lewafer nasesikhwameni sepulasitiki esivaliwe se-ingot enebhokisi lebhokisi ngaphandle, i-polycrystalline germanium ingot iyatholakala uma iceliwe, noma njengokucaciswa okwenziwe ngokwezifiso ukuze kuzuzwe isisombululo esiphelele.
Uphawu | Ge |
Inombolo Ye-athomu | 32 |
Isisindo se-Atomic | 72.63 |
Isigaba Sezinto | I-Metalloid |
Iqembu, Isikhathi, Vimba | 14, 4, p |
Isakhiwo sekristalu | Idayimane |
Umbala | Okumhlophe okumpunga |
I-Melting Point | 937°C, 1211.40K |
Iphuzu elibilayo | 2833°C, 3106K |
Ukuminyana ku-300K | 5.323 g/cm3 |
Ukumelana kwangaphakathi | 46 Ω-cm |
Inombolo ye-CAS | 7440-56-4 |
Inombolo ye-EC | 231-164-3 |
Cha. | Izinto | Ukucaciswa Okujwayelekile | |||
1 | I-German Wafer | 2" | 3" | 4" | 6" |
2 | Ububanzi mm | 50.8±0.3 | 76.2±0.3 | 100±0.5 | 150±0.5 |
3 | Indlela Yokukhula | VGF noma CZ | VGF noma CZ | VGF noma CZ | VGF noma CZ |
4 | I-Conductivity | Uhlobo lwe-P / olune-doped (i-Ga noma i-In), uhlobo lwe-N/i-doped Sb, engafakwanga | |||
5 | Ukuqondisa | (100)±0.5° | (100)±0.5° | (100)±0.5° | (100)±0.5° |
6 | Ubukhulu μm | 145, 175, (500-1000) | |||
7 | Ukungazweli Ω-cm | 0.001-50 | 0.001-50 | 0.001-50 | 0.001-50 |
8 | Ukuhamba cm2/Vs | >200 | >200 | >200 | >200 |
9 | I-TTV μm max | 5, 8, 10 | 5, 8, 10 | 5, 8, 10 | 5, 8, 10 |
10 | Khothama μm max | 15 | 15 | 15 | 15 |
11 | I-Warp μm max | 15 | 15 | 15 | 15 |
12 | Ukuhlukaniswa okungu-cm-2 max | 300 | 300 | 300 | 300 |
13 | EPD cm-2 | <4000 | <4000 | <4000 | <4000 |
14 | I-particle Ibala ubuningi be-a/wafer | 10 (ku-≥0.5μm) | 10 (ku-≥0.5μm) | 10 (ku-≥0.5μm) | 10 (ku-≥0.5μm) |
15 | I-Surface Qeda | P/E, P/P noma njengoba kudingeka | |||
16 | Ukupakisha | Isiqukathi esilucwecwana esisodwa noma ikhasethi ngaphakathi, ibhokisi lebhokisi ngaphandle |
Cha. | Izinto | Ukucaciswa Okujwayelekile | |||
1 | I-Germanium Ingot | 2" | 3" | 4" | 6" |
2 | Uhlobo | Uhlobo lwe-P / olufakwe (Ga, In), uhlobo lwe-N/ olufakwe (As, Sb), olungafakwanga | |||
3 | Ukungazweli Ω-cm | 0.1-50 | 0.1-50 | 0.1-50 | 0.1-50 |
4 | Isikhathi Sokuphila Senkampani Yenethiwekhi μs | 80-600 | 80-600 | 80-600 | 80-600 |
5 | Ubude be-Ingot mm | 140-300 | 140-300 | 140-300 | 140-300 |
6 | Ukupakisha | Ivalwe esikhwameni sepulasitiki noma ebhokisini legwebu ngaphakathi, ibhokisi lebhokisi ngaphandle | |||
7 | Phawula | I-Polycrystalline germanium ingot iyatholakala ngesicelo |
I-Crystal Germanium eyodwaithola izinhlelo zokusebenza ezithembisayo nezibanzi, lapho i-electronic grade isetshenziselwa ama-diode nama-transistors, i-infrared noma i-optical grade germanium engenalutho noma iwindi iwindi le-IR optical noma amadiski, izingxenye ezibonakalayo ezisetshenziswa embonweni wasebusuku kanye nezixazululo ze-imaging ze-thermographic zokuvikela, ukukala izinga lokushisa elikude, izinto zokucisha umlilo kanye nemishini yokuqapha yezimboni, i-P ne-N yohlobo lwe-Germanium wafer efakwe kancane ingasetshenziselwa ukuhlola umphumela weHholo.Ibanga leseli ngelama-substrates asetshenziswa kumaseli elanga e-III-V ahlanganisa kathathu kanye namandla Amasistimu e-PV Agxilile weseli yelanga njll.
Amathiphu Okuthenga
I-Crystal Germanium eyodwa