Sapphire Al2O3 Wafer & Ingot Featured Image

Sapphire Al₂O₃I-Wafer & Ingot

Incazelo

I-Sapphire Single Crystal Wafer & Ingotor I-Aluminium oxide Al₂O₃I-99.999% min, eyaziwa nangokuthi amatshe amhlophe, isakhiwo se-anisotropic hexagonal, iyinto enhle kakhulu enezinjongo eziningi enezindawo ezibonakalayo ezihlukile, izakhiwo zomzimba kanye nezakhiwo zamakhemikhali, ezinobunzima obuphezulu obuphezulu, ukushisa okuphezulu kwe-thermal, ukungaguquki okuphezulu kwe-dielectric, ukukhanya okuhle kakhulu nokuhle. ukuzinza kwamakhemikhali nokumelana nama-acid amakhemikhali avamile nama-alkali.Isafire I-Crystal eyodwa noma i-Aluminium Oxide icrystal eyodwa Al₂O₃Ukuhlanzeka okungu-99.999% e-Western Minmetals (SC) Corporation kungalethwa ngosayizi wobubanzi obungu-2″, 4″ no-6″ (50mm, 100mm, 150mm) i-wafer ne-ingot, enomkhawulo ongaphezulu ekuqedweni kwenqubo eqoshiwe, epholishiwe noma elungele i-epi.Noma yikuphi ukucaciswa okwenziwe ngezifiso kanye nosayizi kuyisixazululo esihle kakhulu kumakhasimende ethu emhlabeni jikelele.

Izinhlelo zokusebenza

Ngenxa yamandla ayo esakhiwo sekristalu yesibili eqinile eduze kwedayimane, ikristalu yeSapphire isetshenziswa kabanzi ekwenzeni i-single crystal substrate, i-superconducting film substrate material, ama-LED akhipha ukukhanya okuluhlaza okwesibhakabhaka, okunsomi nokumhlophe, ama-LED, iwindi le-infrared elinezinga lokushisa eliphezulu, i-laser eluhlaza okwesibhakabhaka i-LD Industrial substrate ekhethwayo.I-Single Crystal Sapphire noma i-crystal aluminium oxide eyodwa i-Al2O3 iwusizo ebangeni lokudlulisela elisuka ku-0.2-5.5 μm kanye nakwezinye izimboni ezithuthukisiwe zokukhiqiza ama-semiconductors amandla.

Buza manje

Imininingwane

Omaka

Ukucaciswa Kwezobuchwepheshe

I-Sapphire Crystal Al₂O₃

I-Sapphire Crystal, enamandla esakhiwo sekristalu yesibili eqinile eduze kwedayimane, isetshenziswa kabanzi ekwenzeni i-crystal substrate eyodwa, i-superconducting film substrate material, ama-LED akhipha ukukhanya okuluhlaza okwesibhakabhaka, okunsomi nokumhlophe, iwindi le-infrared elinokushisa okuphezulu, ne-laser eluhlaza okwesibhakabhaka. I-LD Industrial substrate ekhethwayo.I-Single Crystal Sapphire noma i-crystal aluminium oxide eyodwa i-Al2O3 iwusizo ebangeni lokudlulisela elisuka ku-0.2-5.5 μm kanye nakwezinye izimboni ezithuthukisiwe zokukhiqiza ama-semiconductors amandla.

Cha.	Izinto	Ukucaciswa Okujwayelekile
1	Ububanzi mm	50.8±0.05	100±0.1	150±0.2
2	Indlela Yokukhula	I-HEM	I-HEM	I-HEM
3	Ukuqondisa	(CA) noma (CM)	(CA) noma (CM)	(CA) noma (CM)
4	Indawo Eyisisekelo Yefulethi	I-A-eksisi ±0.2°	I-A-eksisi ±0.2°	I-A-eksisi ±0.2°
5	Ubude Befulethi obuyinhloko mm	16±0.5	30±0.5	47.5±0.5
6	Ubukhulu μm	430±10	650±20	1300±20
7	I-TTV μm max	5	10	15
8	Khothama μm max	5	10	15
9	I-Warp μm max	8	15	30
10	I-Surface Qeda	P/E	P/E	P/E
11	Ukuqina Kobuso nm	<0.2 (i-epi-ready, indawo epholishiwe)
12	Ukupakisha	Esikhwameni sevacuum esigcwele umoya we-nitrogen
13	Ukuphawula	Ingot nenqwaba kufika ku-8" iyatholakala uma icelwa.

Ifomula yomugqa	Al₂O₃
Isisindo samangqamuzana	101.96
Isakhiwo sekristalu	I-Hexagonal
Ukubukeka	Okuqinile okukhanyayo
I-Melting Point	2050 °C, 3720 °F
Iphuzu elibilayo	2977 °C, 5391 °F
Ukuminyana ku-300K	4.0 g/cm³
Igebe Lamandla	N/A
Ukumelana kwangaphakathi	1E16 Ω-cm
Inombolo ye-CAS	1344-28-1
Inombolo ye-EC	N/A

I-Sapphire Single CrystalnomaI-aluminium oxideikristalu eyodwa Al₂O₃Ukuhlanzeka okungu-99.999% e-Western Minmetals (SC) Corporation kungalethwa ngosayizi wobubanzi obungu-2″, 4″ no-6″ (50mm, 100mm, 150mm) i-wafer ne-ingot, enomkhawulo ongaphezulu ekuqedweni kwenqubo eqoshiwe, epholishiwe noma elungele i-epi.Noma yikuphi ukucaciswa okwenziwe ngezifiso kanye nosayizi kuyisixazululo esihle kakhulu kumakhasimende ethu emhlabeni jikelele.