I-Indidium Phosphide InP

Incazelo

I-Indidium Phosphide InP,I-CAS No.22398-80-7, indawo encibilikayo engu-1600°C, isemiconductor eyinhlanganisela kanambambili yomndeni we-III-V, isakhiwo sekristalu esigxile ku-cubic “zinc blende”, esifana neningi lamasemiconductors e-III-V, ahlanganiswa ukusuka I-6N 7N yobumsulwa obuphezulu be-indium kanye nesici se-phosphorus, futhi ikhule yaba yikristalu eyodwa ngobuchule be-LEC noma be-VGF.Ikristalu ye-Indium Phosphide ifakwe ukuze ibe wuhlobo lwe-n, uhlobo lwe-p noma i-semi-insulating conductivity ukuze kuthuthukiswe ukwenziwa kwe-wafer kuze kufike ku-6" (150 mm) ububanzi, okufaka igebe layo lebhendi eliqondile, ukuhamba okuphezulu okuphezulu kwama-electron nezimbobo kanye nokushisa okusebenzayo. conductivity.I-Indium Phosphide InP Wafer yokuqala noma ibanga lokuhlola e-Western Minmetals (SC) Corporation inganikezwa ngohlobo lwe-p, uhlobo lwe-n kanye ne-semi-insulating conductivity ngosayizi ongu-2” 3” 4” no-6”(kufika ku-150mm) ububanzi, umumo <111> noma <100> nogqinsi 350-625um ngokuqedwa kwangaphezulu kwenqubo eqoshiwe nephucuziwe noma elungele i-Epi.Khonamanjalo i-Indium Phosphide Single Crystal ingot 2-6″ iyatholakala uma uyicela.I-Polycrystalline Indium Phosphide InP noma i-Multi-crystal InP ingot elingana no-D(60-75) x Ubude (180-400) mm obungu-2.5-6.0kg ene-concentration yenkampani yenethiwekhi engaphansi kuka-6E15 noma 6E15-3E16 nayo iyatholakala.Noma yikuphi ukucaciswa okwenziwe ngezifiso okutholakalayo lapho ucelwa ukuze kuzuzwe isixazululo esiphelele.

Izinhlelo zokusebenza

Iwafa ye-Indium Phosphide InP isetshenziswa kabanzi ekwenzeni izakhi ze-optoelectronic, izinto zikagesi ezinamandla amakhulu kanye nemvamisa ephezulu, njenge-substrate ye-epitaxial indium-gallium-arsenide (InGaAs) esekelwe kumadivayisi e-opto-electronic.I-Indium Phosphide iphinde ibe sekwenziweni kwemithombo yokukhanya ethembisa ngokwedlulele kwezokuxhumana nge-fiber optical, imishini yomthombo wamandla we-microwave, izikhulisa-zwi ze-microwave kanye namadivayisi wama-FETs wamasango, ama-modulator anesivinini esikhulu nezithonjana zezithombe, nokuzulazula ngesathelayithi nokunye.

Buza manje

Imininingwane

Omaka

Ukucaciswa Kwezobuchwepheshe

I-Indidium Phosphide InP

I-Indidium Phosphide Ikristalu EyodwaI-Wafer (InP crystal ingot noma i-Wafer) e-Western Minmetals (SC) Corporation inganikezwa ngohlobo lwe-p, uhlobo lwe-n kanye ne-semi-insulating conductivity ngosayizi ongu-2” 3” 4” no-6”(kufika ku-150mm) ububanzi, umumo <111> noma <100> nogqinsi 350-625um ngokuqedwa kwangaphezulu kwenqubo eqoshiwe nephucuziwe noma elungele i-Epi.

I-Indidium Phosphide I-Polycrystallinenoma i-Multi-Crystal ingot (InP poly ingot) ngosayizi we-D(60-75) x L(180-400) mm ka-2.5-6.0kg ngokugxilisa kwenkampani yenethiwekhi okungaphansi kuka-6E15 noma 6E15-3E16 iyatholakala.Noma yikuphi ukucaciswa okwenziwe ngezifiso okutholakalayo lapho ucelwa ukuze kuzuzwe isixazululo esiphelele.

Cha.	Izinto	Ukucaciswa Okujwayelekile
1	I-Indidium Phosphide Ikristalu Eyodwa	2"	3"	4"
2	Ububanzi mm	50.8±0.5	76.2±0.5	100±0.5
3	Indlela Yokukhula	VGF	VGF	VGF
4	I-Conductivity	I-P/Zn-doped, N/(S-doped noma i-un-doped), I-Semi-insulating
5	Ukuqondisa	(100)±0.5°, (111)±0.5°
6	Ubukhulu μm	350±25	600±25	600±25
7	I-Orientation Flat mm	16±2	22±1	32.5±1
8	I-Identification Flat mm	8±1	11±1	18±1
9	Ukuhamba cm2/Vs	50-70, >2000, (1.5-4)E3
10	I-Carrier Concentration cm-3	(0.6-6)E18, ≤3E16
11	I-TTV μm max	10	10	10
12	Khothama μm max	10	10	10
13	I-Warp μm max	15	15	15
14	Ukuminyana kokususwa endaweni cm-2 max	500	1000	2000
15	I-Surface Qeda	P/E, P/P	P/E, P/P	P/E, P/P
16	Ukupakisha	Isiqukathi esilucwecwana esisodwa esivalwe esikhwameni esiyinhlanganisela ye-aluminium.

Cha.	Izinto	Ukucaciswa Okujwayelekile
1	I-Indidium Phosphide Ingot	I-Poly-Crystalline noma i-Multi-Crystal Ingot
2	Usayizi we-Crystal	D(60-75) x L(180-400)mm
3	Isisindo nge-Crystal Ingot	2.5-6.0Kg
4	Ukuhamba	≥3500 cm²/VS
5	I-Carrier Concentration	≤6E15, noma 6E15-3E16 cm^-3
6	Ukupakisha	I-InP crystal ingot ngayinye isesikhwameni sepulasitiki esivaliwe, ama-ingots angu-2-3 ebhokisini lebhokisi elilodwa.

Ifomula yomugqa	I-InP
Isisindo samangqamuzana	145.79
Isakhiwo sekristalu	Inhlanganisela yeZinc
Ukubukeka	I-Crystalline
I-Melting Point	1062°C
Iphuzu elibilayo	N/A
Ukuminyana ku-300K	4.81 g/cm³
Igebe Lamandla	1.344 eV
Ukumelana kwangaphakathi	8.6E7 Ω-cm
Inombolo ye-CAS	22398-80-7
Inombolo ye-EC	244-959-5

I-Indidium Phosphide InP Waferisetshenziswa kabanzi ekwenzeni izingxenye ze-optoelectronic, amandla aphezulu kanye namadivayisi kagesi avamile, njenge-substrate ye-epitaxial indium-gallium-arsenide (InGaAs) esekelwe kumadivayisi e-opto-electronic.I-Indium Phosphide iphinde ibe sekwenziweni kwemithombo yokukhanya ethembisa ngokwedlulele kwezokuxhumana nge-fiber optical, imishini yomthombo wamandla we-microwave, izikhulisa-zwi ze-microwave kanye namadivayisi wama-FETs wamasango, ama-modulator anesivinini esikhulu nezithonjana zezithombe, nokuzulazula ngesathelayithi nokunye.