Incazelo
I-Indidium oxide ngaphakathi2O3 noma i-indium trioxide 99.99%, 99.995%, 99.999% kanye no-99.9999%, i-micropowder noma i-nanoparticle light-yellow powder solid solid, CAS 1312-43-3, ukuminyana 7.18g/cm3 futhi incibilika cishe ngo-2000 °C, iyinto ezinzile efana ne-ceramic engancibiliki emanzini, kodwa encibilika ku-asidi ye-inorganic eshisayo.I-Indidium oxide In2O3into yokusebenza ye-semiconductor yohlobo lwe-n enokumelana okuncane, umsebenzi ophezulu we-catalytic kanye negebe elibanzi lebhendi lezinhlelo zokusebenza ze-optoelectronic. I-Indidium oxide In2O3eWestern Minmetals (SC) Corporation ingalethwa ngobumsulwa obungu-99.99%, 99.995%, 99.999% kanye no-99.9999% ngosayizi we-2-10 micron noma -100 mesh powder kanye nebanga le-nano, i-1kg epakishwe ebhodleleni le-polyethylene nesikhwama sepulasitiki esivaliwe, noma 1kg, 2kg 5kg esikhwameni aluminium esiyinhlanganisela nebhokisi ibhokisi ngaphandle, noma njengoba ezibekiweko egcizelele izixazululo ephelele.
Izinhlelo zokusebenza
I-Indidium oxide In2O3 isetshenziswa kabanzi ku-photoelectric, inzwa yegesi, izibonisi ezibomvu zefilimu ezacile, i-catalyst application, isithako esikhethekile sombala wengilazi, amabhethri e-alkaline, nokushintsha kwamandla kagesi aphezulu kanye nokuxhumana, okokuvikela isibuko sensimbi, kanye nefilimu ye-semiconductor ye-electro-optical. isibonisi njll. Ku2O3iyingxenye eyinhloko yethagethi ye-ITO yezibonisi, amawindi awonga amandla kanye nama-photovoltaics.Ngaphezu kwalokho, In2O3 injengento ephikisayo kuma-IC ukuze yakhe ama-heterojunctions ngezinto ezifana ne-p-InP, n-GaAs, n-Si namanye ama-semiconductors.Ngaleso sikhathi, Ukuba nomphumela ongaphezulu, usayizi omncane kanye nomphumela we-macroscopic quantum tunneling,Nano In2O3 ngokuyinhloko okokugcotshwa kwe-optical kanye ne-antistatic, i-transparent conductive coatings application.
Ukucaciswa Kwezobuchwepheshe
Ukubukeka | Impushana ephuzi |
Isisindo samangqamuzana | 277.63 |
Ukuminyana | 7.18 g/cm3 |
I-Melting Point | 2000°C |
Inombolo ye-CAS. | 1312-43-2 |
Cha. | Into | Ukucaciswa Okujwayelekile | ||
1 | Purity In2O3≥ | Ukungcola (I-ICP-MS Test Report PPM Max ngayinye) | ||
2 | 4N | 99.99% | Cu/Al 20, Ti 3.0, Pb 4.0, Sn 7.0, Cd 8.0, Fe 15 | Isamba ≤100 |
4N5 | 99.995% | Cu/Al/Cd/Sn/Ti/Ni/As/Zn 1.0, Si 2.0, Fe/Ca 5.0 | Ingqikithi ≤50 | |
5N | 99.999% | Cu/Pb/Cd/Fe/Ni 0.5, Ca/Sn/Ti 1.0 | Isamba ≤10 | |
6N | 99.9999% | Itholakala ngesicelo | Isamba ≤1.0 | |
3 | Usayizi | 2-10μm powder for 4N 5N5 5N ubumsulwa, -100mesh powder for 6N ubumsulwa | ||
4 | Ukupakisha | 1kg ebhodleleni le-polyethylene elinesikhwama sepulasitiki esivaliwe ngaphandle |
I-Indidium oxide In2O3 noma i-Indidium Trioxide In2O3e-Western Minmetals (SC) Corporation ingalethwa ngobumsulwa obungu-99.99%, 99.995%, 99.999% kanye no-99.9999% 4N 4N5 5N 6N ngosayizi we-2-10 micron noma -100 mesh powder kanye nebanga le-nano, i-1kg ye-thyle epakishwe nge-polye isikhwama sepulasitiki esivaliwe, bese kuba ibhokisi lebhokisi ngaphandle, noma njengokucaciswa okwenziwe ngezifiso ezisombululweni eziphelele.
I-Indidium oxide In2O3 isetshenziswa kabanzi ku-photoelectric, inzwa yegesi, izibonisi ezibomvu zefilimu ezacile, i-catalyst application, isithako esikhethekile sombala wengilazi, amabhethri e-alkaline, nokushintsha kwamandla kagesi aphezulu kanye nokuxhumana, okokuvikela isibuko sensimbi, kanye nefilimu ye-semiconductor ye-electro-optical. isibonisi njll. Ku2O3iyingxenye eyinhloko yethagethi ye-ITO yezibonisi, amawindi awonga amandla kanye nama-photovoltaics.Ngaphezu kwalokho, In2O3injengento ephikisayo kuma-IC ukuze yakhe ama-heterojunctions ngezinto ezifana ne-p-InP, n-GaAs, n-Si namanye ama-semiconductors.Ngaleso sikhathi, Inomphumela ongaphezulu, usayizi omncane kanye nomphumela we-macroscopic quantum tunneling, i-Nano In2O3 ngokuyinhloko okokugcotshwa kwe-optical kanye ne-antistatic, i-transparent conductive coatings application.
Amathiphu Okuthenga
I-Indidium oxide In2O3