I-Indium Arsenide InAs

Incazelo

I-Indium arsenide InAs crystal iyisemiconductor eyinhlanganisela yeqembu III-V ehlanganiswe okungenani yi-6N 7N pure Indium ne-Arsenic element futhi ekhuliswe ikristalu eyodwa nge-VGF noma inqubo ye-Liquid Encapsulated Czochralski ( LEC ), ukubukeka kombala ompunga, amakristalu ayi-cubic anesakhiwo se-zinc-blende. , indawo yokuncibilika engu-942 °C.I-Indium arsenide band gap ingushintsho oluqondile olufana ne-gallium arsenide, futhi ububanzi bebhendi obunqatshelwe ngu-0.45eV (300K).I-InAs crystal inokufana okuphezulu kwamapharamitha kagesi, i-lattice engashintshi, ukuhamba kwama-electron aphezulu kanye nokuminyana kwesici esiphansi.Ikristalu eyicylindrical InAs ekhuliswe i-VGF noma i-LEC ingasikwa futhi yenziwe ibe i-wafer as-cut, egxiliwe, epholishelwe noma i-epi-elungele i-MBE noma i-MOCVD epitaxial ukukhula.

Izinhlelo zokusebenza

I-Indidium arsenide crystal wafer iyindawo engaphansi enhle yokwenza amadivaysi eHholo kanye nenzwa kazibuthe yokuhamba kwayo kwehholo kodwa ibhande lamandla elincanyana, into efanelekile yokwakha izitholi ze-infrared ezinobubanzi be-wavelength obungu-1–3.8 µm obusetshenziswa ezinhlelweni zamandla aphezulu ezingeni lokushisa legumbi, kanye namalaser we-infrared super lattice amaphakathi ne-wavelength, ukwakhiwa kwamadivayisi e-LEDs amaphakathi ne-infrared ebangeni lawo le-wavelength elingu-2-14 μm.Ngaphezu kwalokho, i-InAs iyindawo engaphansi ekahle yokuqhubeka nokusekela i-heterogeneous InGaAs, InAsSb, InAsPSb & InNAsSb noma i-AlGaSb super lattice structure njll.

Buza manje

Imininingwane

Omaka

Ukucaciswa Kwezobuchwepheshe

I-Indidium Arsenide

InAs

I-Indium Arsenide Crystal Waferiyindawo engaphansi enhle yokwenza amadivaysi eHholo kanye nenzwa kazibuthe yokuhamba kwayo kwehholo okuphezulu kodwa i-bandgap yamandla emincane, into efanelekile yokwakha izitholi ze-infrared ezinobubanzi be-wavelength obungu-1–3.8 µm obusetshenziswa kuzinhlelo zokusebenza zamandla aphezulu ekamelweni lokushisa, kanye namalaser we-infrared super lattice we-infrared super lattice, ukwakhiwa kwamadivayisi e-LEDs amaphakathi ne-infrared ebangeni lawo le-wavelength elingu-2-14 μm.Ngaphezu kwalokho, i-InAs iyindawo engaphansi ekahle yokuqhubeka nokusekela i-heterogeneous InGaAs, InAsSb, InAsPSb & InNAsSb noma i-AlGaSb super lattice structure njll.

Cha.	Izinto	Ukucaciswa Okujwayelekile
1	Usayizi	2"	3"	4"
2	Ububanzi mm	50.5±0.5	76.2±0.5	100±0.5
3	Indlela Yokukhula	I-LEC	I-LEC	I-LEC
4	I-Conductivity	P-uhlobo/Zn-doped, N-type/S-doped, Un-doped
5	Ukuqondisa	(100)±0.5°, (111)±0.5°
6	Ubukhulu μm	500±25	600±25	800±25
7	I-Orientation Flat mm	16±2	22±2	32±2
8	I-Identification Flat mm	8±1	11±1	18±1
9	Ukuhamba cm2/Vs	60-300, ≥2000 noma njengoba kudingeka
10	I-Carrier Concentration cm-3	(3-80)E17 noma ≤5E16
11	I-TTV μm max	10	10	10
12	Khothama μm max	10	10	10
13	I-Warp μm max	15	15	15
14	Ukuminyana kokususwa endaweni cm-2 max	1000	2000	5000
15	I-Surface Qeda	P/E, P/P	P/E, P/P	P/E, P/P
16	Ukupakisha	Isiqukathi esilucwecwana esisodwa sivalwe esikhwameni se-Aluminium.

Ifomula yomugqa	InAs
Isisindo samangqamuzana	189.74
Isakhiwo sekristalu	Inhlanganisela yeZinc
Ukubukeka	I-crystalline empunga eqinile
I-Melting Point	(936-942)°C
Iphuzu elibilayo	N/A
Ukuminyana ku-300K	5.67 g/cm³
Igebe Lamandla	0.354 eV
I-Intrinsic Resistivity	0.16 Ω-cm
Inombolo ye-CAS	1303-11-3
Inombolo ye-EC	215-115-3

I-Indium Arsenide InAskwa-Western Minmetals (SC) Corporation ingahlinzekwa njengesigaxa se-polycrystalline noma ama-crystal single as-cut, aqoshwe, aphucuziwe, noma ama-epi-ready wafers ngobukhulu obungu-2” 3” kanye no-4” (50mm, 75mm,100mm) ububanzi, futhi p-type, n-type noma un-doped conductivity kanye <111> noma <100> orientation.Ukucaciswa okwenziwe ngezifiso kuyisixazululo esiphelele kumakhasimende ethu emhlabeni jikelele.