I-Gallium Nitride GaN

Incazelo

I-Gallium Nitride GaN, I-CAS 25617-97-4, i-molecular mass 83.73, i-wurtzite crystal structure, iyinhlanganisela kanambambili eqondile ye-band-gap semiconductor yeqembu III-V ekhule ngendlela yenqubo ye-ammonothermal ethuthuke kakhulu.Iphawuleka ngekhwalithi ephelele yekristalu, ukuqhutshwa kokushisa okuphezulu, ukuhamba kwe-electron ephezulu, insimu kagesi ebucayi kakhulu kanye ne-bandgap ebanzi, i-Gallium Nitride GaN inezici ezifiselekayo kuma-optoelectronics kanye nezicelo zokuzwa.

Izinhlelo zokusebenza

I-Gallium Nitride GaN ilungele ukukhiqizwa kwezingxenye ze-LED zama-LED, i-laser kanye nemishini ye-optoelectronics efana ne-green and blue lasers, high electron mobility transistors (HEMTs) imikhiqizo kanye namandla aphezulu. kanye nemboni yokukhiqiza amadivayisi asezingeni eliphezulu.

Ukulethwa

I-Gallium Nitride GaN e-Western Minmetals (SC) Corporation inganikezwa ngosayizi we-wafer eyindilinga eyi-intshi engu-2 ” noma 4 ” (50mm, 100mm) kanye ne-wafer yesikwele engu-10×10 noma engu-10×5 mm.Noma yimuphi usayizi owenziwe ngezifiso kanye nokucaciswa kuyisixazululo esiphelele kumakhasimende ethu emhlabeni jikelele.

Buza manje

Imininingwane

Omaka

Ukucaciswa Kwezobuchwepheshe

I-Gallium Nitride GaN

I-Gallium Nitride GaNe-Western Minmetals (SC) Corporation inganikezwa ngosayizi we-wafer eyindilinga eyi-intshi engu-2 ” noma 4 ” (50mm, 100mm) kanye ne-wafer yesikwele engu-10×10 noma engu-10×5 mm.Noma yimuphi usayizi owenziwe ngezifiso kanye nokucaciswa kuyisixazululo esiphelele kumakhasimende ethu emhlabeni jikelele.

Cha.	Izinto	Ukucaciswa Okujwayelekile
1	Isimo	Isiyingi	Isiyingi	Isikwele
2	Usayizi	2"	4"	--
3	Ububanzi mm	50.8±0.5	100±0.5	--
4	Ubude obuseceleni mm	--	--	10x10 noma 10x5
5	Indlela Yokukhula	I-HVPE	I-HVPE	I-HVPE
6	Ukuqondisa	I-C-plane (0001)	I-C-plane (0001)	I-C-plane (0001)
7	Uhlobo lwe-Conductivity	I-N-type/Si-doped, Un-doped, Semi-insulating
8	Ukungazweli Ω-cm	<0.1, <0.05, >1E6
9	Ubukhulu μm	350±25	350±25	350±25
10	I-TTV μm max	15	15	15
11	Khothama μm max	20	20	20
12	EPD cm-2	<5E8	<5E8	<5E8
13	I-Surface Qeda	P/E, P/P	P/E, P/P	P/E, P/P
14	Ukuqina Kobuso	Ngaphambili: ≤0.2nm, Emuva: 0.5-1.5μm noma ≤0.2nm
15	Ukupakisha	Isiqukathi esilucwecwana esisodwa sivalwe esikhwameni se-Aluminium.

Ifomula yomugqa	I-GaN
Isisindo samangqamuzana	83.73
Isakhiwo sekristalu	I-Zinc blende/Wurzite
Ukubukeka	Okuqinile okukhanyayo
I-Melting Point	2500 °C
Iphuzu elibilayo	N/A
Ukuminyana ku-300K	6.15 g/cm³
Igebe Lamandla	(3.2-3.29) eV ngo-300K
Ukumelana kwangaphakathi	>1E8 Ω-cm
Inombolo ye-CAS	25617-97-4
Inombolo ye-EC	247-129-0

I-Gallium Nitride GaNilungele ukukhiqizwa kwejubane eliphezulu elisezingeni eliphezulu kanye nomthamo ophezulu ogqamile okhipha ama-diode wezingxenye ze-LED, amadivaysi e-laser nama-optoelectronics afana namalaser aluhlaza naluhlaza, imikhiqizo yama-electron mobility transistors (HEMTs) aphezulu futhi enamandla aphezulu naphezulu- Imboni yokukhiqiza amadivayisi okushisa.