I-Gallium Arsenide Gas

Incazelo

I-Gallium ArsenideI-GaAs yin a i-direct band gap compound semiconductor yeqembu III-V ehlanganiswe okungenani yi-6N 7N high purity gallium kanye ne-arsenic element, kanye nekristalu elikhule nge-VGF noma inqubo ye-LEC kusukela ekuhlanzekeni okuphezulu kwe-polycrystalline gallium arsenide, ukubukeka kombala ompunga, amakristalu ayi-cubic anesakhiwo se-zinc-blende.Ngokusetshenziswa kwe-doping ye-carbon, i-silicon, i-tellurium noma i-zinc ukuze uthole uhlobo lwe-n noma uhlobo lwe-p kanye ne-semi-insulating conductivity ngokulandelanayo, i-cylindrical InAs crystal ingasikwa futhi yenziwe ibe yinto engenalutho kanye ne-wafer in as-cut, etched, polished noma epi. -ilungele i-MBE noma i-MOCVD ukukhula kwe-epitaxial.I-wafer ye-Gallium Arsenide isetshenziselwa ngokuyinhloko ukwenza izinto zikagesi ezifana ne-infrared light-emitting diode, ama-laser diode, amawindi okukhanya, ama-FET we-field-effect transistors, umugqa wama-ICs edijithali namaseli elanga.Izingxenye ze-GaAs ziwusizo kumaza omsakazo aphezulu kakhulu kanye nohlelo lokushintshwa kwe-elekthronikhi olusheshayo, izinhlelo zokusebenza zokukhulisa izignali ezibuthakathaka.Ngaphezu kwalokho, i-Gallium Arsenide substrate iwumsebenzi olungele ukwakhiwa kwezingxenye ze-RF, imvamisa ye-microwave nama-monolithic ICs, kanye namadivayisi we-LEDs kumasistimu okuxhumana okukhanya nokulawula ukuhamba kwawo kwehholo okugcwalayo, amandla aphezulu kanye nokuzinza kwezinga lokushisa.

Ukulethwa

I-Gallium Arsenide GaAs e-Western Minmetals (SC) Corporation ingahlinzekwa njengesigaxa se-polycrystalline noma isicwecwana esiyikristalu esisodwa kuma-wafer as-cut, aqoshiwe, aphucuziwe, noma alungele i-epi ngosayizi ongu-2” 3” 4” kanye no-6” (50mm, 75mm, 100mm, 150mm) ububanzi, nohlobo lwe-p, uhlobo lwe-n noma i-semi-insulating conductivity, kanye ne-<111> noma <100> umumo.Ukucaciswa okwenziwe ngezifiso kuyisixazululo esiphelele kumakhasimende ethu emhlabeni jikelele.

Buza manje

Imininingwane

Omaka

Ukucaciswa Kwezobuchwepheshe

I-Gallium Arsenide

I-GaAs

I-Gallium Arsenide Gasama-wafer asetshenziselwa ngokuyinhloko ukwenza izinto zikagesi ezifana ne-infrared light-emitting diode, ama-laser diode, amafasitela abonakalayo, ama-FET we-field-effect transistors, umugqa wama-IC wedijithali namaseli elanga.Izingxenye ze-GaAs ziwusizo kumaza omsakazo aphezulu kakhulu kanye nohlelo lokushintshwa kwe-elekthronikhi olusheshayo, izinhlelo zokusebenza zokukhulisa izignali ezibuthakathaka.Ngaphezu kwalokho, i-Gallium Arsenide substrate iwumsebenzi olungele ukwakhiwa kwezingxenye ze-RF, imvamisa ye-microwave nama-monolithic ICs, kanye namadivayisi we-LEDs kumasistimu okuxhumana okukhanya nokulawula ukuhamba kwawo kwehholo okugcwalayo, amandla aphezulu kanye nokuzinza kwezinga lokushisa.

Cha.	Izinto	Ukucaciswa Okujwayelekile
1	Usayizi	2"	3"	4"	6"
2	Ububanzi mm	50.8±0.3	76.2±0.3	100±0.5	150±0.5
3	Indlela Yokukhula	VGF	VGF	VGF	VGF
4	Uhlobo lwe-Conductivity	I-N-Type/Si noma i-Te-doped, i-P-Type/Zn-doped, i-Semi-Insulating/Un-doped
5	Ukuqondisa	(100)±0.5°	(100)±0.5°	(100)±0.5°	(100)±0.5°
6	Ubukhulu μm	350±25	625±25	625±25	650±25
7	I-Orientation Flat mm	17±1	22±1	32±1	Inothi
8	I-Identification Flat mm	7±1	12±1	18±1	-
9	Ukungazweli Ω-cm	(1-9)E(-3) yohlobo lwe-p noma lwe-n, (1-10)E8 ye-semi-insulating
10	Ukuhamba cm2/vs	50-120 yohlobo lwe-p, (1-2.5)E3 yohlobo lwe-n, ≥4000 ye-semi-insulating
11	I-Carrier Concentration cm-3	(5-50)E18 yohlobo lwe-p, (0.8-4)E18 yohlobo luka-n
12	I-TTV μm max	10	10	10	10
13	Khothama μm max	30	30	30	30
14	I-Warp μm max	30	30	30	30
15	EPD cm-2	5000	5000	5000	5000
16	I-Surface Qeda	P/E, P/P	P/E, P/P	P/E, P/P	P/E, P/P
17	Ukupakisha	Isiqukathi esilucwecwana esisodwa esivalwe esikhwameni esiyinhlanganisela ye-aluminium.
18	Ukuphawula	I-wafer yebanga likaMechanical ye-GaAs iyatholakala nangesicelo.

Ifomula yomugqa	I-GaAs
Isisindo samangqamuzana	144.64
Isakhiwo sekristalu	Inhlanganisela yeZinc
Ukubukeka	I-crystalline empunga eqinile
I-Melting Point	1400°C, 2550°F
Iphuzu elibilayo	N/A
Ukuminyana ku-300K	5.32 g/cm³
Igebe Lamandla	1.424 eV
Ukumelana kwangaphakathi	3.3E8 Ω-cm
Inombolo ye-CAS	1303-00-0
Inombolo ye-EC	215-114-8

I-Gallium Arsenide Gase-Western Minmetals (SC) Corporation ingahlinzekwa njengesigaxa se-polycrystalline noma i-crystal wafer eyodwa kuma-wafer as-cut, aqoshiwe, aphucuziwe, noma ama-epi-ready ready kasayizi ongu-2” 3” 4” no-6” (50mm, 75mm, 100mm , 150mm) ububanzi, nohlobo lwe-p, uhlobo lwe-n noma i-semi-insulating conductivity, kanye nokuma kwe-<111> noma <100>.Ukucaciswa okwenziwe ngezifiso kuyisixazululo esiphelele kumakhasimende ethu emhlabeni jikelele.