Incazelo
I-FZ Single Crystal Silicon Wafer,I-Float-zone (FZ) I-Silicon iyi-silicon emsulwa kakhulu enendawo ephansi kakhulu yomoya-mpilo kanye nokungcola kwekhabhoni edonswa ubuchwepheshe bokucwenga indawo entantayo eqondile.I-FZ Floating zone iyindlela yokukhulisa i-crystal ingot eyodwa ehlukile endleleni ye-CZ lapho ikristalu yembewu inamathiselwa ngaphansi kwe-polycrystalline silicon ingot, futhi umngcele phakathi kwekristalu yembewu ne-polycrystalline crystal silicon incibilikiswa yi-RF coil induction heat for crystallization eyodwa.Ikhoyili ye-RF nendawo encibilikisiwe iya phezulu, futhi ikristalu eyodwa iyaqina phezu kwekristalu yembewu ngokufanele.I-silicon ye-Float-zone iqinisekiswa ngokusatshalaliswa kwe-dopant okufanayo, ukuhluka okuphansi kokumelana, ukukhawulela amanani okungcola, impilo yonke yenkampani yenethiwekhi, ithagethi yokumelana okuphezulu kanye ne-silicon yokuhlanzeka okuphezulu.I-silicon ye-Float-zone iyindlela ehlanzekile ephezulu kumakristalu akhuliswe inqubo ye-Czochralski CZ.Ngezimpawu zale ndlela, i-FZ Single Crystal Silicon ilungele ukusetshenziswa ekwakhiweni kwezinto zikagesi, njengama-diode, ama-thyristors, ama-IGBT, ama-MEMS, i-diode, idivayisi ye-RF namandla e-MOSFETs, noma njenge-substrate yezinhlayiyana ezinesinqumo esiphezulu noma imitshina yokubona. , amadivayisi kagesi nezinzwa, iseli yelanga esebenza kahle kakhulu njll.
Ukulethwa
I-FZ Single Crystal Silicon Wafer N-uhlobo nohlobo lwe-P-conductivity e-Western Minmetals (SC) Corporation ingalethwa ngosayizi ongu-2, 3, 4, 6 no-8 inch (50mm, 75mm, 100mm, 125mm, 150mm kanye no-200mm) futhi umumo <100>, <110>, <111> ngokuqedwa okungaphezulu kwe-As-cut, Lapped, eqoshiwe futhi epholishwe kuphakheji yebhokisi legwebu noma ikhasethi elinebhokisi lebhokisi ngaphandle.
Ukucaciswa Kwezobuchwepheshe
I-FZ Single Crystal Silicon Wafernoma i-FZ Mono-crystal Silicon Wafer ye-intrinsic, n-type kanye ne-p-type conductivity e-Western Minmetals (SC) Corporation ingalethwa ngobukhulu obuhlukahlukene obuyi-2, 3, 4, 6 kanye no-8 intshi ububanzi (50mm, 75mm, 100mm , 125mm, 150mm kanye no-200mm) kanye nobubanzi obubanzi bokujiya obusuka ku-279um bufika ku-2000um ku-<100>, <110>, <111> umumo ngokuqedwa okungaphezulu kwe-as-cut, i-lapped, iqoshwe futhi ipholishwe ephaketheni lebhokisi legwebu noma ikhasethi nebhokisi lebhokisi ngaphandle.
Cha. | Izinto | Ukucaciswa Okujwayelekile | ||||
1 | Usayizi | 2" | 3" | 4" | 5" | 6" |
2 | Ububanzi mm | 50.8±0.3 | 76.2±0.3 | 100±0.5 | 125±0.5 | 150±0.5 |
3 | I-Conductivity | N/P | N/P | N/P | N/P | N/P |
4 | Ukuqondisa | <100>, <110>, <111> | ||||
5 | Ubukhulu μm | 279, 381, 425, 525, 575, 625, 675, 725 noma njengoba kudingeka | ||||
6 | Ukungazweli Ω-cm | 1-3, 3-5, 40-60, 800-1000, 1000-1400 noma njengoba kudingeka | ||||
7 | Inani eliphakeme kakhulu lama-RRV | 8%, 10%, 12% | ||||
8 | I-TTV μm max | 10 | 10 | 10 | 10 | 10 |
9 | I-Bow/Warp μm ubuningi | 30 | 30 | 30 | 30 | 30 |
10 | I-Surface Qeda | As-cut, L/L, P/E, P/P | ||||
11 | Ukupakisha | Ibhokisi legwebu noma ikhasethi ngaphakathi, ibhokisi lebhokisi ngaphandle. |
Uphawu | Si |
Inombolo Ye-athomu | 14 |
Isisindo se-Atomic | 28.09 |
Isigaba Sezinto | I-Metalloid |
Iqembu, Isikhathi, Vimba | 14, 3, p |
Isakhiwo sekristalu | Idayimane |
Umbala | Okumpunga okumnyama |
I-Melting Point | 1414°C, 1687.15 K |
Iphuzu elibilayo | 3265°C, 3538.15 K |
Ukuminyana ku-300K | 2.329 g/cm3 |
Ukumelana kwangaphakathi | 3.2E5 Ω-cm |
Inombolo ye-CAS | 7440-21-3 |
Inombolo ye-EC | 231-130-8 |
FZ Single Crystal Silicon, enezici ezibalulekile zendlela ye-Float-zone (FZ), ilungele ukusetshenziswa ekwenziweni kwezinto zikagesi, njengama-diode, ama-thyristors, ama-IGBT, ama-MEMS, i-diode, idivayisi ye-RF kanye nama-MOSFET amandla, noma njenge-substrate yokulungiswa okuphezulu. izinhlayiya noma izitholi zamehlo, izisetshenziswa zamandla nezinzwa, iseli yelanga esebenza kahle kakhulu njll.
Amathiphu Okuthenga
I-FZ Silicon Wafer