I-FZ NTD Silicon Wafer

Incazelo

I-FZ-NTD Silicon Wafer, eyaziwa ngokuthi i-Float-Zone Neutron Transmutation Doped Silicon Wafer.I-silicon engenawo umoya-mpilo, ukuhlanzeka okuphezulu kanye ne-silicon yokumelana okuphezulu kakhulu ingatholwa by I-Float-zone FZ (Zone-Floating) ukukhula kwekristalu, HI-igh resistivity FZ silicon crystal ivamise ukwenziwa yinqubo ye-Neutron Transmutation Doping (NTD), lapho ukukhanya kwe-neutron ku-silicon ye-float zone engavuliwe ukwenza ama-isotopu e-silicon avaleleke ngama-neutron bese abola kuma-dopants afiswayo ukuze kuzuzwe umgomo wokudotshwa.Ngokulungisa izinga lemisebe ye-neutron, i-resistivity ingashintshwa ngaphandle kokwethula ama-dopant angaphandle futhi ngenxa yalokho kuqinisekiswe ubumsulwa bezinto ezibonakalayo.Ama-silicon wafers e-FZ NTD (I-Float Zone Neutron Transmutation Doping Silicon) anezakhiwo zobuchwepheshe ze-premium zokugxilisa i-doping umfaniswano kanye nokusabalalisa okufanayo kwe-radial resistivity, amazinga aphansi okungcola,kanye nesikhathi sempilo yenkampani yenethiwekhi encane.

Ukulethwa

Njengomphakeli ohamba phambili emakethe we-NTD sililikoni wokwethembisa izicelo zamandla, nokulandela izimfuno ezikhulayo zamawafa ekhwalithi ephezulu, iwafer ye-silicon ephakeme ye-FZ NTDeWestern Minmetals (SC) Corporation inganikelwa kumakhasimende ethu emhlabeni wonke ngobukhulu obuhlukahlukene kusukela ku-2″, 3″, 4″, 5″ no-6″ ububanzi (50mm, 75mm, 100mm, 125mm kanye 150mm) kanye nohlu olubanzi lokumelana 5 ukuya ku-2000 ohm.cm ku-<1-1-1>, <1-1-0>, <1-0-0> ukuma okune-as-cut, lapped, egxiliwe futhi epholishelwe indawo esebhokisini legwebu noma ikhasethi , noma njengokucaciswa okwenziwe ngezifiso kusixazululo esiphelele.

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Ukucaciswa Kwezobuchwepheshe

I-FZ NTD Silicon Wafer

Njengomphakeli ohamba phambili emakethe we-silicon ye-FZ NTD yezinhlelo zokusebenza zamandla ezithembisayo, futhi kulandela izimfuno ezikhulayo zamawafa ekhwalithi ephezulu, i-FZ NTD silicon wafer ephakeme e-Western Minmetals (SC) Corporation inganikezwa amakhasimende ethu emhlabeni wonke ngobukhulu obuhlukahlukene kusukela ku-2 ″ ukuya ku-6″ ububanzi (50, 75, 100, 125 kanye no-150mm) kanye nohlu olubanzi lokumelana no-5 kuya ku-2000 ohm-cm ku-<1-1-1>, <1-1-0>, <1-0- 0> izinkomba ezinendawo egqinsiwe, egxilile futhi epholishiwe ephaketheni lebhokisi legwebu noma ikhasethi, ibhokisi lebhokisi ngaphandle noma njengokucaciswa okwenziwe ngokwezifiso kusixazululo esiphelele.

Cha.	Izinto	Ukucaciswa Okujwayelekile
1	Usayizi	2"	3"	4"	5"	6"
2	Ububanzi	50.8±0.3	76.2±0.3	100±0.5	125±0.5	150±0.5
3	I-Conductivity	n-uhlobo	n-uhlobo	n-uhlobo	n-uhlobo	n-uhlobo
4	Ukuqondisa	<100>, <111>, <110>
5	Ubukhulu μm	279, 381, 425, 525, 575, 625, 675, 725 noma njengoba kudingeka
6	Ukungazweli Ω-cm	36-44, 44-52, 90-110, 100-250, 200-400 noma njengoba kudingeka
7	Inani eliphakeme kakhulu lama-RRV	8%, 10%, 12%
8	I-TTV μm max	10	10	10	10	10
9	I-Bow/Warp μm ubuningi	30	30	30	30	30
10	Isikhathi Sokuphila Senkampani Yenethiwekhi μs	> 200, > 300, > 400 noma njengoba kudingeka
11	I-Surface Qeda	As-cut, Lapped, polished
12	Ukupakisha	Ibhokisi legwebu ngaphakathi, ibhokisi lebhokisi ngaphandle.

Ipharamitha Yezinto Eziyisisekelo

Uphawu	Si
Inombolo Ye-athomu	14
Isisindo se-Atomic	28.09
Isigaba Sezinto	I-Metalloid
Iqembu, Isikhathi, Vimba	14, 3, p
Isakhiwo sekristalu	Idayimane
Umbala	Okumpunga okumnyama
I-Melting Point	1414°C, 1687.15 K
Iphuzu elibilayo	3265°C, 3538.15 K
Ukuminyana ku-300K	2.329 g/cm³
Ukumelana kwangaphakathi	3.2E5 Ω-cm
Inombolo ye-CAS	7440-21-3
Inombolo ye-EC	231-130-8

I-FZ-NTD Silicon Waferkubaluleke kakhulu ezinhlelweni zokusebenza ezinamandla aphezulu, ubuchwepheshe bomtshina kanye namadivayisi we-semiconductor okufanele asebenze ezimeni ezimbi kakhulu noma lapho ukuhluka okuphansi kokumelana ne-wafer kuyadingeka, njengesango lokuvala i-thyristor GTO, i-static induction thyristor SITH, i-giant i-transistor GTR, i-insulate-gate bipolar transistor IGBT, i-PIN ye-HV diode eyengeziwe.I-FZ NTD n-uhlobo lwe-silicon wafer iphinde ibe yinto esemqoka esebenzayo yeziguquli zefrikhwensi ehlukahlukene, izihlungi, izinto zokulawula amandla amakhulu, izinto ezintsha zikagesi ezinamandla, amadivaysi e-photoelectronic, i-silicon rectifier SR, i-silicon control SCR, kanye nezinto ezibonakalayo njengamalensi namafasitela. ngezicelo ze-terahertz.