Njengomphakeli ohamba phambili emakethe we-silicon ye-FZ NTD yezinhlelo zokusebenza zamandla ezithembisayo, futhi kulandela izimfuno ezikhulayo zamawafa ekhwalithi ephezulu, i-FZ NTD silicon wafer ephakeme e-Western Minmetals (SC) Corporation inganikezwa amakhasimende ethu emhlabeni wonke ngobukhulu obuhlukahlukene kusukela ku-2 ″ ukuya ku-6″ ububanzi (50, 75, 100, 125 kanye no-150mm) kanye nohlu olubanzi lokumelana no-5 kuya ku-2000 ohm-cm ku-<1-1-1>, <1-1-0>, <1-0- 0> izinkomba ezinendawo egqinsiwe, egxilile futhi epholishiwe ephaketheni lebhokisi legwebu noma ikhasethi, ibhokisi lebhokisi ngaphandle noma njengokucaciswa okwenziwe ngokwezifiso kusixazululo esiphelele.
Cha. | Izinto | Ukucaciswa Okujwayelekile | ||||
1 | Usayizi | 2" | 3" | 4" | 5" | 6" |
2 | Ububanzi | 50.8±0.3 | 76.2±0.3 | 100±0.5 | 125±0.5 | 150±0.5 |
3 | I-Conductivity | n-uhlobo | n-uhlobo | n-uhlobo | n-uhlobo | n-uhlobo |
4 | Ukuqondisa | <100>, <111>, <110> | ||||
5 | Ubukhulu μm | 279, 381, 425, 525, 575, 625, 675, 725 noma njengoba kudingeka | ||||
6 | Ukungazweli Ω-cm | 36-44, 44-52, 90-110, 100-250, 200-400 noma njengoba kudingeka | ||||
7 | Inani eliphakeme kakhulu lama-RRV | 8%, 10%, 12% | ||||
8 | I-TTV μm max | 10 | 10 | 10 | 10 | 10 |
9 | I-Bow/Warp μm ubuningi | 30 | 30 | 30 | 30 | 30 |
10 | Isikhathi Sokuphila Senkampani Yenethiwekhi μs | > 200, > 300, > 400 noma njengoba kudingeka | ||||
11 | I-Surface Qeda | As-cut, Lapped, polished | ||||
12 | Ukupakisha | Ibhokisi legwebu ngaphakathi, ibhokisi lebhokisi ngaphandle. |
Uphawu | Si |
Inombolo Ye-athomu | 14 |
Isisindo se-Atomic | 28.09 |
Isigaba Sezinto | I-Metalloid |
Iqembu, Isikhathi, Vimba | 14, 3, p |
Isakhiwo sekristalu | Idayimane |
Umbala | Okumpunga okumnyama |
I-Melting Point | 1414°C, 1687.15 K |
Iphuzu elibilayo | 3265°C, 3538.15 K |
Ukuminyana ku-300K | 2.329 g/cm3 |
Ukumelana kwangaphakathi | 3.2E5 Ω-cm |
Inombolo ye-CAS | 7440-21-3 |
Inombolo ye-EC | 231-130-8 |
I-FZ-NTD Silicon Waferkubaluleke kakhulu ezinhlelweni zokusebenza ezinamandla aphezulu, ubuchwepheshe bomtshina kanye namadivayisi we-semiconductor okufanele asebenze ezimeni ezimbi kakhulu noma lapho ukuhluka okuphansi kokumelana ne-wafer kuyadingeka, njengesango lokuvala i-thyristor GTO, i-static induction thyristor SITH, i-giant i-transistor GTR, i-insulate-gate bipolar transistor IGBT, i-PIN ye-HV diode eyengeziwe.I-FZ NTD n-uhlobo lwe-silicon wafer iphinde ibe yinto esemqoka esebenzayo yeziguquli zefrikhwensi ehlukahlukene, izihlungi, izinto zokulawula amandla amakhulu, izinto ezintsha zikagesi ezinamandla, amadivaysi e-photoelectronic, i-silicon rectifier SR, i-silicon control SCR, kanye nezinto ezibonakalayo njengamalensi namafasitela. ngezicelo ze-terahertz.