Epitaxial (EPI) Silicon Wafer Featured Image

I-Epitaxial (EPI) I-Silicon Wafer

Incazelo

I-Epitaxial Silicon Wafernoma i-EPI Silicon Wafer, iyicwecwe eliwungqimba lwekristalu elenziwe nge-semiconducting elifakwe endaweni ecwebezelayo ye-silicon substrate ngokukhula kwe-epitaxial.Isendlalelo se-epitaxial singase sibe into efanayo ne-substrate ngokukhula kwe-epitaxial okulinganayo, noma isendlalelo esingavamile esinekhwalithi ethile efiselekayo ngokukhula kwe-epitaxial ehlukahlukene, eyamukela ubuchwepheshe bokukhula kwe-epitaxial obuhlanganisa i-chemical vapor deposition CVD, isigaba se-epitaxy LPE, kanye ne-molecular beam. i-epitaxy MBE ukuze kuzuzwe ikhwalithi ephezulu kakhulu yokuminyana okunesici esiphansi kanye nokubamahwashana okuhle kwendawo.Ama-Silicon Epitaxial Wafers asetshenziswa ngokuyinhloko ekukhiqizweni kwamadivayisi athuthukisiwe we-semiconductor, izakhi ze-semiconductor ezididiyelwe kakhulu, ama-IC, ama-discrete namandla, futhi asetshenziselwa isici se-diode ne-transistor noma i-substrate ye-IC efana nohlobo lwe-bipolar, i-MOS kanye namadivayisi we-BiCMOS.Ngaphezu kwalokho, ama-wafers e-silicone e-epitaxial engqimba amaningi kanye nefilimu ewugqinsi ye-EPI avame ukusetshenziswa ku-microelectronics, i-photonics kanye nesicelo se-photovoltaics.

Ukulethwa

I-Epitaxial Silicon Wafers noma i-EPI Silicon Wafer at Western Minmetals (SC) Corporation inganikezwa ngosayizi ongu-4, 5 no-6 intshi (100mm, 125mm, 150mm ububanzi), ngomumo ongu-<100>, <111>, i-epilayer resistivity engu-<1ohm -cm noma kufika ku-150ohm-cm, kanye nogqinsi lwe-epilayer engu-<1um noma kufika ku-150um, ukwanelisa izidingo ezihlukahlukene ekuqedeni okungaphezulu kokwelashwa okuqoshiwe noma kwe-LTO, epakishwe kukhasethi elinebhokisi lebhokisi ngaphandle, noma njengokucaciswa okwenziwe ngokwezifiso kusixazululo esiphelele. .

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Ukucaciswa Kwezobuchwepheshe

I-Epi Silicon Wafer

I-Epitaxial Silicon Wafersnoma i-EPI Silicon Wafer e-Western Minmetals (SC) Corporation inganikezwa ngosayizi we-intshi engu-4, 5 no-6 (100mm, 125mm, 150mm ububanzi), i-orientation engu-<100>, <111>, i-epilayer resistivity engu-<1ohm-cm noma kufika ku-150ohm-cm, kanye nogqinsi lwe-epilayer engu-<1um noma kufika ku-150um, ukuze kwanelise izidingo ezihlukahlukene ekuqedeni okungaphezulu kokwelashwa okuqoshiwe noma kwe-LTO, epakishwe kukhasethi elinebhokisi lebhokisi ngaphandle, noma njengokucaciswa okwenziwe ngokwezifiso ukuze kube nesixazululo esiphelele.

Uphawu	Si
Inombolo Ye-athomu	14
Isisindo se-Atomic	28.09
Isigaba Sezinto	I-Metalloid
Iqembu, Isikhathi, Vimba	14, 3, p
Isakhiwo sekristalu	Idayimane
Umbala	Okumpunga okumnyama
I-Melting Point	1414°C, 1687.15 K
Iphuzu elibilayo	3265°C, 3538.15 K
Ukuminyana ku-300K	2.329 g/cm³
Ukumelana kwangaphakathi	3.2E5 Ω-cm
Inombolo ye-CAS	7440-21-3
Inombolo ye-EC	231-130-8

Cha.	Izinto	Ukucaciswa Okujwayelekile
1	Izimpawu Ezijwayelekile
1-1	Usayizi	4"	5"	6"
1-2	Ububanzi mm	100±0.5	125±0.5	150±0.5
1-3	Ukuqondisa	<100>, <111>	<100>, <111>	<100>, <111>
2	I-Epitaxial Layer Characters
2-1	Indlela Yokukhula	I-CVD	I-CVD	I-CVD
2-2	Uhlobo lwe-Conductivity	P noma P+, N/ noma N+	P noma P+, N/ noma N+	P noma P+, N/ noma N+
2-3	Ubukhulu μm	2.5-120	2.5-120	2.5-120
2-4	Ukuqina Uniformity	≤3%	≤3%	≤3%
2-5	Ukungazweli Ω-cm	0.1-50	0.1-50	0.1-50
2-6	I-Resistivity Uniformity	≤3%	≤5%	-
2-7	Ukuhlukaniswa cm-2	<10	<10	<10
2-8	Ikhwalithi Yobuso	Akukho chip, inkungu noma ikhasi lewolintshi elisele, njll.
3	Phatha izici ze-Substrate
3-1	Indlela Yokukhula	CZ	CZ	CZ
3-2	Uhlobo lwe-Conductivity	P/N	P/N	P/N
3-3	Ubukhulu μm	525-675	525-675	525-675
3-4	Ubukhulu Uniformity max	3%	3%	3%
3-5	Ukungazweli Ω-cm	Njengoba kudingeka	Njengoba kudingeka	Njengoba kudingeka
3-6	I-Resistivity Uniformity	5%	5%	5%
3-7	I-TTV μm max	10	10	10
3-8	Khothama μm max	30	30	30
3-9	I-Warp μm max	30	30	30
3-10	I-EPD cm-2 ubuningi	100	100	100
3-11	Iphrofayela ye-Edge	Okuyindilinga	Okuyindilinga	Okuyindilinga
3-12	Ikhwalithi Yobuso	Akukho chip, inkungu noma ikhasi lewolintshi elisele, njll.
3-13	Emuva Side Qeda	I-Etched noma i-LTO (5000±500Å)
4	Ukupakisha	Ikhasethi ngaphakathi, ibhokisi lebhokisi ngaphandle.

I-Silicon Epitaxial Wafersasetshenziswa ngokuyinhloko ekukhiqizeni amadivaysi esemiconductor athuthukisiwe, ama-ICs ahlanganiswe kakhulu esemiconductor, amadivaysi ahlukene kanye namandla, aphinde asetshenziselwa isici se-diode ne-transistor noma i-substrate ye-IC efana nohlobo lwe-bipolar, i-MOS kanye namadivayisi we-BiCMOS.Ngaphezu kwalokho, ama-wafers e-silicone e-epitaxial engqimba amaningi kanye nefilimu ewugqinsi ye-EPI avame ukusetshenziswa ku-microelectronics, i-photonics kanye nesicelo se-photovoltaics.