I-CZ Silicon Wafer

Incazelo

CZ Single Crystal Silicon Wafer inqunywa ku-single crystal silicon ingot edonswa indlela yokukhula ye-Czochralski CZ, esetshenziswa kakhulu ekukhuleni kwe-silicon crystal yama-ingots amakhulu angama-cylindrical asetshenziswa embonini ye-electronics ukwenza amadivaysi e-semiconductor.Kule nqubo, imbewu ezacile ye-crystal silicon enokubekezelelana kokuma okunembile ingeniswa kubhavu oncibilikisiwe we-silicon okushisa kwayo kulawulwa ngokunembile.Ikristalu yembewu idonselwa phezulu kancane isuka ekuncibilikeni ngenani elilawulwa kakhulu, ukuqiniswa kwekristalu kwama-athomu kusuka esigabeni esiwuketshezi kwenzeka endaweni esibonakalayo, ikristalu yembewu kanye ne-crucible ijikeleziswa ngezindlela ezihlukile phakathi nale nqubo yokuhoxiswa, kudala eyodwa enkulu. i-crystal silicon enesakhiwo se-crystalline esiphelele sembewu.

Ngenxa yamandla kazibuthe asetshenziswa ekudonseni ingot okujwayelekile kwe-CZ, i-Czochralski MCZ yekristalu eyodwa ye-silicon eyodwa ye-Czochralski inezinga eliphansi lokungcola ngokuqhathaniswa, izinga le-oxygen eliphansi kanye nokugudluka, kanye nokwehluka kokumelana okufanayo okusebenza kahle ezingxenyeni namadivayisi ezobuchwepheshe obuphezulu. ukukhiqizwa ezimbonini zikagesi noma ze-photovoltaic.

Ukulethwa

I-CZ noma i-MCZ Single Crystal Silicon Wafer n-type kanye ne-p-type conductivity e-Western Minmetals (SC) Corporation ingalethwa ngosayizi we-2, 3, 4, 6, 8 kanye no-12 intshi ububanzi (50, 75, 100, 125, 150, 200 kanye no-300mm), umumo <100>, <110>, <111> oqedwe phezulu ogqitshiwe, oqoshiwe futhi wapholishwa ephaketheni lebhokisi legwebu noma ikhasethi elinebhokisi lebhokisi ngaphandle.

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Omaka

Ukucaciswa Kwezobuchwepheshe

I-CZ Silicon Wafer

CZ Single Crystal Silicon Wafer into eyisisekelo ekukhiqizeni amasekethe adidiyelwe, ama-diode, ama-transistors, izingxenye ezihlukene, asetshenziswa kuzo zonke izinhlobo zemishini kagesi kanye namadivayisi we-semiconductor, kanye ne-substrate ekucubungulweni kwe-epitaxial, i-SOI wafer substrate noma ukwakhiwa kwe-wafer ehlanganisiwe eyi-semi-insulating, ikakhulukazi enkulu. ububanzi obungu-200mm, 250mm kanye no-300mm bulungele ukukhiqiza amadivaysi ahlanganiswe kakhulu.I-Single Crystal Silicon iphinde isetshenziselwe amaseli elanga ngamanani amakhulu yimboni ye-photovoltaic, cishe isakhiwo sekristalu esiphelele esikhiqiza ukusebenza kahle okuphezulu kokuguqulwa kokukhanya kuya kugesi.

Cha.	Izinto	Ukucaciswa Okujwayelekile
1	Usayizi	2"	3"	4"	6"	8"	12"
2	Ububanzi mm	50.8±0.3	76.2±0.3	100±0.5	150±0.5	200±0.5	300±0.5
3	I-Conductivity	P noma N noma un-doped
4	Ukuqondisa	<100>, <110>, <111>
5	Ubukhulu μm	279, 381, 425, 525, 575, 625, 675, 725 noma njengoba kudingeka
6	Ukungazweli Ω-cm	≤0.005, 0.005-1, 1-10, 10-20, 20-100, 100-300 njll
7	Inani eliphakeme kakhulu lama-RRV	8%, 10%, 12%
8	I-Primary Flat/Ubude mm	Njengezinga le-SEMI noma njengoba kudingeka
9	Ifulethi Lesibili/Ubude mm	Njengezinga le-SEMI noma njengoba kudingeka
10	I-TTV μm max	10	10	10	10	10	10
11	I-Bow & Warp μm max	30	30	30	30	30	30
12	I-Surface Qeda	As-cut, L/L, P/E, P/P
13	Ukupakisha	Ibhokisi legwebu noma ikhasethi ngaphakathi, ibhokisi lebhokisi ngaphandle.

Uphawu	Si
Inombolo Ye-athomu	14
Isisindo se-Atomic	28.09
Isigaba Sezinto	I-Metalloid
Iqembu, Isikhathi, Vimba	14, 3, p
Isakhiwo sekristalu	Idayimane
Umbala	Okumpunga okumnyama
I-Melting Point	1414°C, 1687.15 K
Iphuzu elibilayo	3265°C, 3538.15 K
Ukuminyana ku-300K	2.329 g/cm³
Ukumelana kwangaphakathi	3.2E5 Ω-cm
Inombolo ye-CAS	7440-21-3
Inombolo ye-EC	231-130-8

CZ noma MCZ Single Crystal Silicon WaferI-n-type kanye ne-p-type conductivity e-Western Minmetals (SC) Corporation ingalethwa ngosayizi we-2, 3, 4, 6, 8 kanye no-12 amayintshi ububanzi (50, 75, 100, 125, 150, 200 kanye no-300mm), umumo <100>, <110>, <111> ngokuqedwa okungaphezulu kwe-as-cut, ehlanganiswe, eqoshiwe futhi epholishwe kuphakheji yebhokisi legwebu noma ikhasethi elinebhokisi lebhokisi ngaphandle.