I-Imec, ihabhu yaseBelgium yocwaningo nokusungula, yethule amadivayisi okuqala asebenzayo asuselwa ku-GaAs-based heterojunction bipolar transistor (HBT) ku-300mm Si, kanye namadivayisi asekelwe ku-CMOS asekelwe ku-GaN ku-200mm Si yezinhlelo zokusebenza ze-mm-wave.
Imiphumela ibonisa amandla ako kokubili i-III-V-on-Si ne-GaN-on-Si njengobuchwepheshe obuhambisana ne-CMOS bokuvumela amamojula angaphambili e-RF ukuze adlule izinhlelo zokusebenza ze-5G.Zethulwa engqungqutheleni ye-IEDM yangonyaka odlule (Dec 2019, San Francisco) futhi zizofakwa esethulweni esibalulekile sikaMichael Peeters ka-Imec mayelana nokuxhumana kwabathengi ngale kwe-broadband e-IEEE CCNC (10-13 Jan 2020, Las Vegas).
Ekuxhumaneni okungenantambo, nge-5G njengesizukulwane esilandelayo, kukhona ukuphusha okuya kumaza okusebenza aphezulu, ukusuka kumabhendi aminyene angaphansi kwe-6GHz kuya kumabhendi wamaza ama-mm (nangaphezulu).Ukwethulwa kwalawa ma-mm-wave bands kunomthelela omkhulu kungqalasizinda yenethiwekhi ye-5G kanye namadivayisi eselula.Ezinsizeni zeselula kanye Nokufinyelela Okungenantambo Okugxilile (i-FWA), lokhu kuhumushela kumamojula ahamba phambili ayinkimbinkimbi athumela isignali kuye noma ukusuka othini.
Ukuze ukwazi ukusebenza kuma-mm-wave frequencies, amamojula we-RF front-end kuyodingeka ahlanganise isivinini (ukunika amandla amanani edatha angu-10Gbps nangaphezulu) namandla okukhipha aphezulu.Ngaphezu kwalokho, ukusetshenziswa kwabo kuma-handsets eselula kubeka izidingo eziphezulu kufomu yabo yefomu nokusebenza kahle kwamandla.Ngale kwe-5G, lezi zidingo ngeke zisafezwa ngamamojula aphambili aphambili e-RF anamuhla ngokuvamile ancike ezinhlobonhlobo zobuchwepheshe obuhlukahlukene phakathi kobunye obusekelwe kuma-HBT asekelwe ku-GaAs wezikhulisamandla zamandla - ezikhuliswa ngama-GaAs amancane nabizayo.
"Ukuze unike amandla amamojula angaphambili e-RF esizukulwane esilandelayo ngale kwe-5G, i-Imec ihlola ubuchwepheshe obuhambisana ne-CMOS III-V-on-Si", kusho uNadine Collaert, umqondisi wohlelo kwa-Imec."I-Imec ibheka ukuhlanganiswa kwezingxenye ezingaphambili (njengama-amplifiers nama-switch) namanye ama-circuits asekelwe ku-CMOS (njenge-control circuitry noma ubuchwepheshe be-transceiver), ukunciphisa izindleko kanye nesici sefomu, kanye nokunika amandla ama-topology amasha we-hybrid circuit. ukubhekana nokusebenza nokusebenza kahle.I-Imec ihlola imizila emibili ehlukene: (1) I-InP ku-Si, eqondise i-mm-wave namafrikhwensi angaphezu kuka-100GHz (izinhlelo zokusebenza ze-6G zesikhathi esizayo) kanye (2) namadivayisi asekelwe ku-GaN ku-Si, eqondise (esigabeni sokuqala) i-mm-wave ephansi. amabhande kanye nokubhekana nezinhlelo zokusebenza ezidinga ukuminyana kwamandla aphezulu.Kuyo yomibili imizila, manje sesithole amadivaysi okuqala asebenzayo anezici zokusebenza ezithembisayo, futhi sihlonze izindlela zokuqhubeka nokuthuthukisa amaza azo okusebenza.”
Amadivayisi asebenzayo e-GaAs/InGaP HBT akhule ku-300mm Si aboniswe njengesinyathelo sokuqala sokuvumela amadivayisi asekelwe ku-InP.Isitaki sedivayisi esingenasici esingaphansi kokungu-3x106cm-2 ukuminyana kokunqunywa sitholwe kusetshenziswa inqubo eyingqayizivele ye-Imec III-V nano-ridge engineering (NRE).Amadivayisi asebenza kangcono kakhulu kunamadivayisi ereferensi, anama-GaAs enziwe kuma-Si substrates anezendlalelo ze-strain relaxed buffer (SRB).Esinyathelweni esilandelayo, amadivayisi asuselwa ku-InP ahamba phambili (i-HBT ne-HEMT) azohlolwa.
Isithombe esingenhla sibonisa indlela ye-NRE yokuhlanganiswa kwe-hybrid III-V/CMOS ku-300mm Si: (a) ukwakheka kwe-nano-trench;amaphutha avaleleke endaweni emincane yomsele;(b) Ukukhula kwesitaki se-HBT kusetshenziswa i-NRE kanye (c) nezinketho zesakhiwo ezihlukile zokuhlanganiswa kwedivayisi ye-HBT.
Ngaphezu kwalokho, amadivayisi asekelwe ku-CMOS e-GaN/AlGaN asekelwe ku-200mm Si enziwe aqhathanisa nezakhiwo zedivayisi ezintathu ezihlukene - ama-HEMTs, ama-MOSFET kanye nama-MISHEMTs.Kwaboniswa ukuthi amadivayisi we-MISHEMT asebenza kangcono kunezinye izinhlobo zedivayisi ngokuya ngokulinganisa kwedivayisi nokusebenza komsindo wokusebenza kwemvamisa ephezulu.Amafrikhwensi okusikwa aphezulu we-fT/fmax azungeze u-50/40 atholwe ngobude bamasango angu-300nm, ahambisana namadivayisi abikiwe e-GaN-on-SiC.Ngaphandle kokunye ukukala ubude besango, imiphumela yokuqala nge-AlInN njengento evimbelayo ibonisa amandla okuqhubeka nokuthuthukisa ukusebenza, futhi ngalokho, ukwandisa imvamisa yokusebenza kwedivayisi kumabhendi e-mm-wave adingekayo.
Isikhathi sokuthumela: 23-03-21